Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs

Abstract

We investigate the influences of quantum transport and scattering effects in Si double-gate MOSFETs based on Wigner Monte Carlo (WMC) approach. It is shown that quantum reflection effect makes significant differences in microscopic features of electron transport between classical and quantum approaches and can even reduce drain current at on-state, but it does not necessarily produce drastic change in macroscopic properties including the drain current. On the other hand, source-drain direct tunneling crucially degrades the subthreshold properties in scaled MOSFETs with sub-10 nm gate length. Furthermore, the ability of the WMC method to describe quantum-classical transition of carrier transport is demonstrated.