先进CMOS图像传感器的三维TCAD仿真

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035082

Z. Essa, P. Boulenc, C. Tavernier, F. Hirigoyen, A. Crocherie, J. Michelot, D. Rideau

{"title":"先进CMOS图像传感器的三维TCAD仿真","authors":"Z. Essa, P. Boulenc, C. Tavernier, F. Hirigoyen, A. Crocherie, J. Michelot, D. Rideau","doi":"10.1109/SISPAD.2011.6035082","DOIUrl":null,"url":null,"abstract":"This paper presents a full 3-Dimensionnal TCAD simulation methodology for advanced CMOS image sensors. In order to consider 3D process effects, full 3D TCAD process simulations have been carried out on different advanced pixels. Based upon the obtained 3D doping distributions, 3D opto-electrical device simulation results have been compared to both 2D based approaches and experimental results. Full 3D simulation results show a qualitative agreement with measurements.","PeriodicalId":264913,"journal":{"name":"2011 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"3D TCAD simulation of advanced CMOS image sensors\",\"authors\":\"Z. Essa, P. Boulenc, C. Tavernier, F. Hirigoyen, A. Crocherie, J. Michelot, D. Rideau\",\"doi\":\"10.1109/SISPAD.2011.6035082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a full 3-Dimensionnal TCAD simulation methodology for advanced CMOS image sensors. In order to consider 3D process effects, full 3D TCAD process simulations have been carried out on different advanced pixels. Based upon the obtained 3D doping distributions, 3D opto-electrical device simulation results have been compared to both 2D based approaches and experimental results. Full 3D simulation results show a qualitative agreement with measurements.\",\"PeriodicalId\":264913,\"journal\":{\"name\":\"2011 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2011.6035082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2011.6035082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

本文提出了一种先进CMOS图像传感器的全三维TCAD仿真方法。为了考虑三维过程效果，在不同的高级像素上进行了全三维TCAD过程模拟。基于得到的三维掺杂分布，将三维光电器件仿真结果与二维方法和实验结果进行了比较。全三维仿真结果与实测结果定性一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

3D TCAD simulation of advanced CMOS image sensors

This paper presents a full 3-Dimensionnal TCAD simulation methodology for advanced CMOS image sensors. In order to consider 3D process effects, full 3D TCAD process simulations have been carried out on different advanced pixels. Based upon the obtained 3D doping distributions, 3D opto-electrical device simulation results have been compared to both 2D based approaches and experimental results. Full 3D simulation results show a qualitative agreement with measurements.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2011 International Conference on Simulation of Semiconductor Processes and Devices

自引率

0.00%

发文量