Electron-phonon scattering in Si and Ge: From bulk to nanodevices

Abstract

Using a sp3d5s* tight-binding model for the electrons and a valence force field model for the phonons, we investigate the electron-phonon scattering rates in Si and Ge. The bulk Si mobility calculated with this model (µ = 1400 cm2/V/s) and its temperature dependence agree well with experimental data. We are able to analyze the much lower values obtained in Si nanowires where both carriers and phonons are confined.