A wigner function-based determinist method for the simulation of quantum transport in silicon nanowire transistors

Abstract

We present a model of quantum transport for Si nanowire transistor that makes use of the Wigner function formalism and takes into account carrier scattering. Scattering effects on current-voltage (I–V) characteristics are assessed using both the relaxation time approximation and the Boltzmann collision operator. Within the Fermi golden rule approximation, the standard collision term is described for both acoustic phonon and surface-roughness interactions. Then, the model is applied to study the impact of each scattering mechanism on short-channel electrical performance of Si nanowire transistors for different gate lengths.