早期电迁移寿命估计的紧凑模型

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035040

R. L. de Orio, H. Ceric, S. Selberherr

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引用次数: 2

摘要

提出了一种铜双母线M1/通孔结构早期电迁移失效的紧凑模型。该模型基于早期失效模式的相关物理效应，考虑了严格的孔洞成核模型和简单的裂隙孔洞生长机制。得到了早期电迁移寿命的简单解析模型。此外，仿真结果还表明，仿真结果对早期寿命提供了合理的估计。

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A compact model for early electromigration lifetime estimation

A compact model for early electromigration failures in copper dual-damascene M1/via structures is proposed. The model is derived based on relevant physical effects of the early failure mode, where a rigorous void nucleation model and a simple mechanism for slit void growth are considered. As a result, a simple analytical model for the early electromigration lifetime is obtained. In addition, it is shown that the simulations provide a reasonable estimation for the early lifetimes.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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