硅和锗中的电子-声子散射:从体块到纳米器件

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035046

D. Rideau, W. Zhang, Y. Niquet, C. Delerue, C. Tavernier, H. Jaouen

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引用次数: 5

摘要

利用电子的sp3d5s*紧密结合模型和声子的价力场模型，研究了Si和Ge中电子-声子的散射速率。用该模型计算的体硅迁移率(µ= 1400 cm2/V/s)及其温度依赖性与实验数据吻合较好。我们能够分析在载流子和声子都受到限制的硅纳米线中获得的低得多的值。

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Electron-phonon scattering in Si and Ge: From bulk to nanodevices

Using a sp3d5s* tight-binding model for the electrons and a valence force field model for the phonons, we investigate the electron-phonon scattering rates in Si and Ge. The bulk Si mobility calculated with this model (µ = 1400 cm2/V/s) and its temperature dependence agree well with experimental data. We are able to analyze the much lower values obtained in Si nanowires where both carriers and phonons are confined.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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