统计MOSFET电流的变化由于表面粗糙度散射的变化

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035022

C. Alexander, A. Asenov

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引用次数: 3

摘要

提出了一种在三维蒙特卡罗模拟中有效、准确地包含一般真实合成表面表面粗糙度散射的方法，并进行了验证。然后应用该方法研究了18nm块体硅nMOSFET中由于表面粗糙度散射变化而导致的漏极电流变化，与静电漂移扩散模拟相比，突出显示低漏极偏压下的变化显著增加。

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Statistical MOSFET current variation due to variation in surface roughness scattering

An efficient and accurate method to include surface roughness scattering from a general, realistic synthesized surface in 3D Monte Carlo simulation is presented with verification. The method is then applied to study drain current variation due to variation in surface roughness scattering in an 18nm bulk Silicon nMOSFET, highlighting substantially increased variation at low drain bias compared with electrostatic drift diffusion simulation.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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