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2018 International Symposium on Semiconductor Manufacturing (ISSM)最新文献

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Auto Threshold Management after Equipment Maintenance 设备维护后自动阈值管理
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/ISSM.2018.8651140
H. Shinozaki, Tomonori Tanaka
{"title":"Auto Threshold Management after Equipment Maintenance","authors":"H. Shinozaki, Tomonori Tanaka","doi":"10.1109/ISSM.2018.8651140","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651140","url":null,"abstract":"In management of the FDC (Fault Detection and Classification) alarm threshold, sensor drift after maintenance has been big and major challenge. Especially in etching area where has relatively short maintenance (cleaning) cycle and many chambers and recipes (our fab is high-mix low-volume type.). We developed auto threshold re-calculate system practical and easily introduce. Using the system we successfully reduce needed cost of re-calculate the threshold and loss of manufacturing time.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"67 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121250235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Real-time Allocation of Multi-Type Production Resource with Due Date grouping for MTO Manufacturing 基于到期日分组的MTO制造多类型生产资源实时分配
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/ISSM.2018.8651129
Motoharu Tanaka, S. Arima
{"title":"Real-time Allocation of Multi-Type Production Resource with Due Date grouping for MTO Manufacturing","authors":"Motoharu Tanaka, S. Arima","doi":"10.1109/ISSM.2018.8651129","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651129","url":null,"abstract":"The simultaneous n-type resource allocation method SRAR2 was improved both in the computational time and the optimization levels in this study. The computational time becomes less than 1 second for the actual resource allocation problem of three types of resource and of 2 months demands (# decision variables:157440, wafer test process). SRAR2 and due-date oriented dispatching such as EDD (Earliest Due-date first) achieved the best performance as the result of supplemental effects.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129763962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Establishment of An Advanced Diagnostic Technology by Conductivity 先进电导率诊断技术的建立
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/ISSM.2018.8651149
Akira Nakahira, Youske Inoue, Kazuyuki Fujii, K. Shirakawa, Hidehiko Kawaguchi
{"title":"Establishment of An Advanced Diagnostic Technology by Conductivity","authors":"Akira Nakahira, Youske Inoue, Kazuyuki Fujii, K. Shirakawa, Hidehiko Kawaguchi","doi":"10.1109/ISSM.2018.8651149","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651149","url":null,"abstract":"We have established an advanced diagnostic technology by using conductivity between parts of semiconductor equipment from RF perspective. In this paper, we explain an outline of our method and report the results which show its effectiveness.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130370213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of polishing conditions of rectangular substrate 矩形基板抛光条件的优化
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/ISSM.2018.8651173
Akira Ozeki, Matsunori Mori
{"title":"Optimization of polishing conditions of rectangular substrate","authors":"Akira Ozeki, Matsunori Mori","doi":"10.1109/ISSM.2018.8651173","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651173","url":null,"abstract":"In chemical mechanical polishing (CMP) process where mechanical effect is dominant, Preston’s equation is widely known that the removal rate (RR) is proportional to pressure and sliding speed as follows begin{equation*}R R = k * P * Vend{equation*} where k is a proportionality constant called Preston’s coefficient. P, V are pressure and sliding speed, respectively [1].","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"24 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130022947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unveil the Black Box for Performance Efficiency of OEE for Semiconductor Wafer Fabrication 揭开半导体晶圆制造OEE性能效率的黑盒子
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/ISSM.2018.8651146
Chih-Min Yu, C. Kuo, Chih-Lin Chiu, Wei-Chin Wen, Minghua Zhang
{"title":"Unveil the Black Box for Performance Efficiency of OEE for Semiconductor Wafer Fabrication","authors":"Chih-Min Yu, C. Kuo, Chih-Lin Chiu, Wei-Chin Wen, Minghua Zhang","doi":"10.1109/ISSM.2018.8651146","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651146","url":null,"abstract":"This study has demonstrated practical viability of the proposed approach employing datamining technics, Neural Networks (NNs), to estimate the productivity of individual process tool sets in a semiconductor factory, and to assess the efficiency loss by 15 related individual input factors, which included “process time”, “number of recipes”, “usable tool”, “Q-time constrain”, “standard deviation of lot size”, “batch size”, “sampling rate”, “hot lot ratio” and etc.. An empirical study was conducted by using the equipment data of a real fab. The results showed that the proposed approaches can define performance efficiency of Overall equipment efficiency (OEE) more reasonable, which discover underlying factors for efficiency loss, and help to improve performace efficiency from 91.23% to 94.03%.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131770115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Using Full Trace Analytics to Simplify Root Cause Analysis 使用全跟踪分析简化根本原因分析
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/issm.2018.8651175
M. Yelverton, T. Ho, Joe Lee
{"title":"Using Full Trace Analytics to Simplify Root Cause Analysis","authors":"M. Yelverton, T. Ho, Joe Lee","doi":"10.1109/issm.2018.8651175","DOIUrl":"https://doi.org/10.1109/issm.2018.8651175","url":null,"abstract":"In semiconductor manufacturing, traditional root cause analysis using FDC summary data is not always effective in solving complex issues, especially when the defect signals are too subtle to detect. Full trace analytics enables the discovery of these hidden signals allowing fab engineers to accurately pinpoint the root causes of yield-impacting issues. This paper highlights several use cases illustrating how advanced full trace analytics can help not only in providing accurate results, but also in simplifying the root cause analysis process and reducing time-to-root-cause.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131108831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Realization of “skeleton wafer” testing for electrical failure analysis 实现“骨架晶圆”测试，用于电气故障分析
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/ISSM.2018.8651160
H. Yanagita, Akihito Jingu, S. Okanishi, S. Tanaka, T. Koyama
{"title":"Realization of “skeleton wafer” testing for electrical failure analysis","authors":"H. Yanagita, Akihito Jingu, S. Okanishi, S. Tanaka, T. Koyama","doi":"10.1109/ISSM.2018.8651160","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651160","url":null,"abstract":"This paper proposes a highly cost-efficient failure analysis method for yield enhancement. A fully automatic “skeleton wafer” testing system has been developed. This system has performed high-throughput accurate probing on each bare die on a sawn wafer from which many chips have been taken away and has enabled high success rate of diagnosis. Extended application for high-temperature measurement was also demonstrated.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123711211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Equipment Productivity Variability: throughput impact analysis 设备生产率变异性:吞吐量影响分析
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/ISSM.2018.8651145
Marco Pinna, Giuseppe Fazio, M. Montagner, E. Troncet
{"title":"Equipment Productivity Variability: throughput impact analysis","authors":"Marco Pinna, Giuseppe Fazio, M. Montagner, E. Troncet","doi":"10.1109/ISSM.2018.8651145","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651145","url":null,"abstract":"The scope of this paper is to describe the methodology we are using to identify the equipment where variability effects can jeopardize the overall fab performance and how to address the root causes of their productivity (e.g. number of processed wafers/day) and its related variability. In this work, we are describing some real cases related to equipment speed variability because this is one of the most difficult to identify as performance detractor and its detection helps to explore that part of the “unknown” equipment performances loss.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129320347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prediction of the Number of Defects in Image Sensors by VM using Equipment QC Data 基于设备质量控制数据的虚拟机图像传感器缺陷数预测
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/issm.2018.8651135
Toshiya Okazaki, Kosuke Okusa, K. Yoshida
{"title":"Prediction of the Number of Defects in Image Sensors by VM using Equipment QC Data","authors":"Toshiya Okazaki, Kosuke Okusa, K. Yoshida","doi":"10.1109/issm.2018.8651135","DOIUrl":"https://doi.org/10.1109/issm.2018.8651135","url":null,"abstract":"This paper describes methods and evaluation results of predicting the number of defects in image sensors. We used regression tree and stepwise AIC for variable selection and generalized linear model for regression, instead of partial least squares (PLS) regression. The results showed improvement in prediction performance in comparison with the conventional method. By this, we could predict other countable values such as defects or dust particles.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129336229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Inhibitation of substrate heating in a Minimal Multi-Target Helicon sputtering tool 最小多目标螺旋溅射工具中衬底加热的抑制
2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI: 10.1109/ISSM.2018.8651176
Taichi Saito, Kazunori Takahashi, A. Ando, S. Hara
{"title":"Inhibitation of substrate heating in a Minimal Multi-Target Helicon sputtering tool","authors":"Taichi Saito, Kazunori Takahashi, A. Ando, S. Hara","doi":"10.1109/ISSM.2018.8651176","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651176","url":null,"abstract":"A minimal multi-target helicon sputtering tool has been developed for depositing a multi-layer metallic film in Minimal Fab System. In sputtering processes, high energy charged particles and recoil neutrals often flow into the substrate, resulting in an increase in a substrate temperature. Here the substrate temperature is investigated in a laboratory prototype of the minimal multi-target sputtering tool. Our experiment shows that the increase in the temperature can be successfully inhibited by installing a magnetic filter. This result implies that the increase in the substrate temperature is induced by secondary electrons from the target surface.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131239768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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