矩形基板抛光条件的优化

2018 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2018-12-01 DOI:10.1109/ISSM.2018.8651173

Akira Ozeki, Matsunori Mori

{"title":"矩形基板抛光条件的优化","authors":"Akira Ozeki, Matsunori Mori","doi":"10.1109/ISSM.2018.8651173","DOIUrl":null,"url":null,"abstract":"In chemical mechanical polishing (CMP) process where mechanical effect is dominant, Preston’s equation is widely known that the removal rate (RR) is proportional to pressure and sliding speed as follows \\begin{equation*}R R = k * P * V\\end{equation*} where k is a proportionality constant called Preston’s coefficient. P, V are pressure and sliding speed, respectively [1].","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"24 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization of polishing conditions of rectangular substrate\",\"authors\":\"Akira Ozeki, Matsunori Mori\",\"doi\":\"10.1109/ISSM.2018.8651173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In chemical mechanical polishing (CMP) process where mechanical effect is dominant, Preston’s equation is widely known that the removal rate (RR) is proportional to pressure and sliding speed as follows \\\\begin{equation*}R R = k * P * V\\\\end{equation*} where k is a proportionality constant called Preston’s coefficient. P, V are pressure and sliding speed, respectively [1].\",\"PeriodicalId\":262428,\"journal\":{\"name\":\"2018 International Symposium on Semiconductor Manufacturing (ISSM)\",\"volume\":\"24 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Semiconductor Manufacturing (ISSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2018.8651173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2018.8651173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在机械效应占主导地位的化学机械抛光(CMP)过程中，众所周知的普雷斯顿方程是，去除速率(RR)与压力和滑动速度成正比，如下\begin{equation*}R R = k * P * V\end{equation*}，其中k是称为普雷斯顿系数的比例常数。P、V分别为压力、滑动速度[1]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Optimization of polishing conditions of rectangular substrate

In chemical mechanical polishing (CMP) process where mechanical effect is dominant, Preston’s equation is widely known that the removal rate (RR) is proportional to pressure and sliding speed as follows \begin{equation*}R R = k * P * V\end{equation*} where k is a proportionality constant called Preston’s coefficient. P, V are pressure and sliding speed, respectively [1].

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 International Symposium on Semiconductor Manufacturing (ISSM)

自引率

0.00%

发文量