T. Kang, Tan Tong Hong, Huong Chung Yew, Oh Sang Hun, You Hyuk Joon
{"title":"Failure Mechanism of High Via Resistance Induced by Fluorine and Moisture","authors":"T. Kang, Tan Tong Hong, Huong Chung Yew, Oh Sang Hun, You Hyuk Joon","doi":"10.1109/ISSM.2018.8651143","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651143","url":null,"abstract":"High Via resistance for borderless Via design was detected at PCM E-test step during wafer fabrication. The high via resistance wafers were sent for TEM and EDX analysis to determine the failure root cause. From the TEM images, a layer of non-conductive material is seen at the Via hole bottom. EDX analysis and probe spectrum analysis confirmed the foreign material is Al-F-O compound. A Design of Experiment (DOE) was carried out to determine the dominant factor contributing to the formation of the Al-F-O material after post Via etch clean.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131299653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The electrical effect on Schottky barrier diodes of emitted hydrogen from dielectric films","authors":"T. Shiraishi","doi":"10.1109/ISSM.2018.8651182","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651182","url":null,"abstract":"Hydrogen, emitted from dielectric films during annealing, could change electrical characteristics of devices. It is important to understand each phenomena quantitatively for setting up a robust manufacturing process. This paper is focusing on the effect of hydrogen on forward voltage of Schottky barrier diode (SBD), and is also explaining the importance of controlling the amount of hydrogen, emitted from dielectric films, to obtain satisfactory characteristics.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116216665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Armin Siegel, A. Zhakov, Hailong Zhu, T. Schmidt, S. Hummel, Lars Fienhold
{"title":"Trailer based rail monitoring in overhead hoist transport systems","authors":"Armin Siegel, A. Zhakov, Hailong Zhu, T. Schmidt, S. Hummel, Lars Fienhold","doi":"10.1109/ISSM.2018.8651147","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651147","url":null,"abstract":"In 300 mm semiconductor factories, overhead transport (OHT) systems used for safe and fast transportation of wafers. These systems consist of a rail network and OHT vehicles. The components of the rail system are subject to high stress through vehicle motion. Individual fault-related failures in the rail network can cause considerable damage and loss of production. Therefore, it is necessary to reduce the fault probability to a minimum. For this reason, extensive preventive maintenance should be used with such a rail system. In preparation to change to a condition-based maintenance strategy, we developed a measuring platform for rail condition monitoring. This article describes the design of this platform and presents a first example of 3-D measurement data acquisition for spatial alignments checks.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"53 3-4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123471837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Shima, Satomi Hamada, C. Takatoh, Y. Wada, A. Fukunaga, Hiroshi Sobukawa
{"title":"Characterization of Self-Contamination from PVA Roll Brush with Atomic Force Microscopy and Fluorescent Microscopy","authors":"S. Shima, Satomi Hamada, C. Takatoh, Y. Wada, A. Fukunaga, Hiroshi Sobukawa","doi":"10.1109/ISSM.2018.8651166","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651166","url":null,"abstract":"We have found three suspected self-contamination sources from PVA brushes using high resolution AFM imaging and fluorescence microscopy. The first source is thin layers on the surface of the fresh (not used) PVA brushes. The second source is a weariness of the brush surface during the cleaning process. The third source is the particles embedded in the bulk region (inside) of the brushes. We have not yet identified the right source of contamination. In addition, the stripe like nano-structure is firstly observed in the bulk region of PVA brush both with AFM lateral force and viscoelastic measuring mode. We need to perform further precise studies to comprehend contamination phenomena during cleaning.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130027641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Control rule of metrology tool alignment for semiconductor cross FABs","authors":"T. Wang, Ya-chuan Chan","doi":"10.1109/ISSM.2018.8651134","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651134","url":null,"abstract":"In response to the development in semiconductors, global semiconductor factories generally have cross-regional and cross-border Multi-Fab trends and needs; and with the needs of “new product types”, “next generation products” and “new customers”, consistent measurements must be developed. Cross-plant measurement machine consistency management mechanisms and methods should maintain cross-plant baseline to ensure product and production capacity’s flexibility and fast deployment, to achieve an open semiconductor foundry.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130180730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hiroaki Kato, Kenya Kobayashi, Toshifumi Nishiguchi, Saya Shimomura
{"title":"Process Control Technique to Reduce Wafer Warpage for Trench Field Plate Power MOSFET","authors":"Hiroaki Kato, Kenya Kobayashi, Toshifumi Nishiguchi, Saya Shimomura","doi":"10.1109/ISSM.2018.8651148","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651148","url":null,"abstract":"Field-Plate (FP) MOSFET structure has field-plate and thick oxide inside each trench. Due to the field-plate effect, it can improve tradeoff between low drift layer resistance and high breakdown voltage. In this structure, wafer warpage is larger than that of conventional structure. It causes various problems, for example an error in vacuum adsorption or wafer handling. We predicted the warpage change in a newly designed FP-MOSFET by TCAD simulation, and studied the reason of the warpage peculiar to FP-MOSFET. Moreover, we made a countermeasure in some critical process steps, and controlled the wafer warpage until the end of process.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127752513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An Advanced Fault Detection Method for Post-CMP Brush Scrubbers","authors":"Yohei Hamaguchi, Shin Aoyama, Tetsuya Tayama, Tsuyoshi Miyatake, Hidehiko Kawaguchi","doi":"10.1109/ISSM.2018.8651144","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651144","url":null,"abstract":"We have developed an advanced fault detection method for post-Chemical Mechanical Polisher (CMP) scrubbers to detect actual rotation statuses. We have found out a relationship between rotation statuses and motor torques by theoretical consideration. We have verified the consideration by measuring the motor torques of two types of mass-production brush scrubbers, roller and pencil brush scrubbers. We are quite confident our method is effective to enhance productivity of the scrubbers.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133580302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Equipment Comparison Analysis using ANOVA of FDC Statistics","authors":"H. Shinozaki, Yoshiyuki Nakao","doi":"10.1109/ISSM.2018.8651172","DOIUrl":"https://doi.org/10.1109/ISSM.2018.8651172","url":null,"abstract":"In case of specific equipment in fleet has a problem, we applied ANOVA (Analysis of Variance) of FDC (Fault Detection and Classification) statistics data to extract the problem related sensors. And using the statistics trend and link analysis with various process data we successfully reached root cause of the problem. In this paper we demonstrate how to solve the problem that frequent stage heater disconnection in a Metal-CVD equipment.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132806536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Approaches to Facility Equipment and Production Tools for Energy Saving Activities","authors":"Shunsuke Kuroki, M. Izuchi","doi":"10.1109/issm.2018.8651159","DOIUrl":"https://doi.org/10.1109/issm.2018.8651159","url":null,"abstract":"In order to reduce large energy consumption in semiconductor factories, we have renewed inefficient facility equipment and production tools to higher efficient equipment with introducing advanced control. These renewals result in approximately 6% reduction of energy consumption in 2018/1H against 2014/1H. The typical examples of energy saving activities are reported in this paper.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116857566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}