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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)最新文献

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Small angle scattering experiments on annealed gallium arsenide single crystal wafers 退火砷化镓单晶片的小角散射实验
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785098
M. Herms, G. Goperigk, V. Klemm, G. Meier, G. Zychowitz
{"title":"Small angle scattering experiments on annealed gallium arsenide single crystal wafers","authors":"M. Herms, G. Goperigk, V. Klemm, G. Meier, G. Zychowitz","doi":"10.1109/SIM.1998.785098","DOIUrl":"https://doi.org/10.1109/SIM.1998.785098","url":null,"abstract":"The minimum concentration of excess atoms precipitated in GaAs and InP being necessary to cause observable small angle scattering of X-rays and neutrons (SAXS and SANS, respectively) was estimated. Consequently, undoped melt-grown GaAs wafers were annealed at high arsenic pressure. Areas of a strongly increased density of precipitate were localized by transmission electron microscopy. SAXS experiments have revealed a very weak intensity being dependent on energy at values of the scattering vector Q>0.02 /spl Aring//sup -1/. Different annealing procedures have resulted in distinguishable curves of SANS (Q<0.03 /spl Aring//sup -1/) in dependence on temperature and arsenic pressure.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123316382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and electronic properties of clean and defected Si-SiC[001] surfaces 清洁和缺陷Si-SiC表面的结构和电子性能[001]
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785125
G. Galli, F. Gygi, A. Catellani
{"title":"Structural and electronic properties of clean and defected Si-SiC[001] surfaces","authors":"G. Galli, F. Gygi, A. Catellani","doi":"10.1109/SIM.1998.785125","DOIUrl":"https://doi.org/10.1109/SIM.1998.785125","url":null,"abstract":"We have studied the reconstructions and electronic properties of both clean and defected Si-terminated [001] surfaces of cubic SiC, by performing first principles computations within density functional theory. We find that the unstrained bulk exhibits a stable p(2/spl times/1) reconstruction, whereas a bulk under tensile stress shows a c(4/spl times/2) reconstruction. Furthermore our calculations indicate that ad-dimers are common defects on the Si-terminated SiC[001] surface. These results permit the interpretation of recent STM and X-ray-photoemission experimental data.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131491440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxidation of GaAlAs red LED surface due to light irradiation 光照射对GaAlAs红色LED表面氧化的影响
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785110
T. Shimozaki, T. Okino, M. Yamane
{"title":"Oxidation of GaAlAs red LED surface due to light irradiation","authors":"T. Shimozaki, T. Okino, M. Yamane","doi":"10.1109/SIM.1998.785110","DOIUrl":"https://doi.org/10.1109/SIM.1998.785110","url":null,"abstract":"Formation of a light absorptive layer on the surface of a GaAlAs LED due to light irradiation has been studied by irradiating red, green light and infrared ray LEDs on a pellet of a GaAlAs device. The Auger electron spectroscopy depth profiles and electron probe micro analysis have revealed that the light absorptive layer is formed on the n-site surface by the light irradiation. Photocatalysis reactions may play a very important role in the formation of the layer.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132610223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The electrical properties of semi-insulating GaAs analysed as a relaxation semiconductor 分析了半绝缘砷化镓作为弛豫半导体的电学特性
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785078
B. Jones, J. Santana, M. McPherson
{"title":"The electrical properties of semi-insulating GaAs analysed as a relaxation semiconductor","authors":"B. Jones, J. Santana, M. McPherson","doi":"10.1109/SIM.1998.785078","DOIUrl":"https://doi.org/10.1109/SIM.1998.785078","url":null,"abstract":"From experiments on semi-insulating (SI) GaAs diodes it is shown that the results can be analysed using relaxation semiconductor theory. This is most apparent for P-SI-N or Schottky-SI-Ohmic diodes and the agreement improves after irradiation when the ratio of generation-recombination (g-r) centres to deep levels increases.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132677474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical properties of GaInN/GaN heterostructures and quantum wells GaInN/GaN异质结构和量子阱的光学特性
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785115
C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, I. Akasaki
{"title":"Optical properties of GaInN/GaN heterostructures and quantum wells","authors":"C. Wetzel, T. Takeuchi, S. Nitta, S. Yamaguchi, H. Amano, I. Akasaki","doi":"10.1109/SIM.1998.785115","DOIUrl":"https://doi.org/10.1109/SIM.1998.785115","url":null,"abstract":"Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations in the ternary layers are identified in both systems revealing large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). From spatially resolved luminescence a very narrow distribution /spl Delta/E=28 meV of the bandgap energy is derived (x=0.187). From the variation of the field with strain a piezoelectric coefficient dP/sub z//d/spl epsiv//sub zz/=0.3 C/m/sup 2/ is obtained corresponding to e/sub 14/=0.1 C/m/sup 2/ and an equilibrium polarization of GaN of P/sub eq/=43 mCm/sup 2/ is extrapolated in qualitative agreement with recent calculations.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132832041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-ray studies of Al/sub x/Ga/sub 1-x/As implanted with 1.5 MeV Se ions 1.5 MeV Se离子注入Al/sub -x/ Ga/sub - 1-x/As的x射线研究
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785104
W. Wierzchowski, K. Wieteska, A. Turos, W. Graeff, R. Groetzschel
{"title":"X-ray studies of Al/sub x/Ga/sub 1-x/As implanted with 1.5 MeV Se ions","authors":"W. Wierzchowski, K. Wieteska, A. Turos, W. Graeff, R. Groetzschel","doi":"10.1109/SIM.1998.785104","DOIUrl":"https://doi.org/10.1109/SIM.1998.785104","url":null,"abstract":"Al/sub x/Ga/sub 1-x/As epitaxial layers with x=0.45 and low dislocation density, implanted with 1.5 MeV Se/sup +/ ions to doses of 6/spl times/10/sup 13/-1/spl times/10/sup 15/ ions/cm/sup 2/ were studied with X-ray diffraction methods using conventional and synchrotron X-ray sources. The implantation caused considerable increase of lattice parameter reaching the maximum at the dose of 2/spl times/10/sup 14/ ions/cm/sup 2/. It was also found that the implantation produced a relatively thick layer with almost constant lattice parameter. The applied doses did not produce lattice amorphization at room temperature.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134006623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new technique for the detection of structural defects in SiC bulk crystals 一种检测SiC体晶结构缺陷的新技术
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785127
T. Argunova, J. Baruchel, J. Hartwig
{"title":"A new technique for the detection of structural defects in SiC bulk crystals","authors":"T. Argunova, J. Baruchel, J. Hartwig","doi":"10.1109/SIM.1998.785127","DOIUrl":"https://doi.org/10.1109/SIM.1998.785127","url":null,"abstract":"Structural defects in sublimation sandwich grown SiC wafers of a large area have been studied with diffraction, absorption and phase contrast imaging techniques by using highly parallel X-ray flux. The contrast appeared due to either tilt, strain or density gradients between a matrix and a defect. Coherence properties of hard X-ray beams of third-generation synchrotron radiation sources such as the ESRF, were utilized to produce phase contrast in a free-space propagation mode. The nature of the observed defects has been confirmed by scanning electron and optical microscopy data.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115326618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of SiGe layers grown by LPE and CVD LPE和CVD生长SiGe层的电学性质
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785105
O. Kruger, W. Seifert, M. Kittler, A. Gutjahr, I. Silier, M. Konuma, K. Said, M. Caymax, J. Poortmans
{"title":"Electrical properties of SiGe layers grown by LPE and CVD","authors":"O. Kruger, W. Seifert, M. Kittler, A. Gutjahr, I. Silier, M. Konuma, K. Said, M. Caymax, J. Poortmans","doi":"10.1109/SIM.1998.785105","DOIUrl":"https://doi.org/10.1109/SIM.1998.785105","url":null,"abstract":"In this paper we present electrical properties of a few microns thick, relaxed SiGe layers for solar cell application. The layers were characterized by means of electron beam induced current (EBIC), X-ray microanalysis (EDX), backscattered electrons, and Hall effect analysis.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114383817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultrafast response times and enhanced optical nonlinearity in annealed and Beryllium doped low-temperature grown GaAs 退火和掺铍低温生长砷化镓的超快响应时间和增强的光学非线性
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785085
M. Haiml, A. Prasad, F. Morier-Genoud, U. Siegner, U. Keller, E. Weber
{"title":"Ultrafast response times and enhanced optical nonlinearity in annealed and Beryllium doped low-temperature grown GaAs","authors":"M. Haiml, A. Prasad, F. Morier-Genoud, U. Siegner, U. Keller, E. Weber","doi":"10.1109/SIM.1998.785085","DOIUrl":"https://doi.org/10.1109/SIM.1998.785085","url":null,"abstract":"We have quantitatively studied the optical nonlinearity in annealed and in beryllium doped low-temperature grown (LT) GaAs. This study has been complemented by measurements of the temporal decay of the absorption modulation on the 20-fs time scale. Our results show that both be doping and annealing of LT GaAs yield a material with superior properties for ultrafast all-optical switching applications.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123395571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Degradation mechanisms in GaN/AlaN/InGaN LEDs and LDs GaN/AlaN/InGaN led和ld的降解机制
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785120
D. Barton, M. Osiński
{"title":"Degradation mechanisms in GaN/AlaN/InGaN LEDs and LDs","authors":"D. Barton, M. Osiński","doi":"10.1109/SIM.1998.785120","DOIUrl":"https://doi.org/10.1109/SIM.1998.785120","url":null,"abstract":"Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to spring 1994. Following the initial studies of rapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number of Nichia NLPB-500 LEDs on a series of life tests. The first test ran for 1000 hours under normal operating conditions (20 mA at 23/spl deg/C). As no noticeable degradation was observed, a second 23/spl deg/C test was performed with the same devices but with a range of currents between 20 and 70 mA. For subsequent tests, the temperature was increased by 10/spl deg/C in 500 h intervals up to a final temperature of 95/spl deg/C using the same currents applied in the second test. This work presents a thermal degradation mechanism that dominates degradation at high ambient temperatures.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114951508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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