Electrical properties of SiGe layers grown by LPE and CVD

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785105

O. Kruger, W. Seifert, M. Kittler, A. Gutjahr, I. Silier, M. Konuma, K. Said, M. Caymax, J. Poortmans

引用次数: 2

Abstract

In this paper we present electrical properties of a few microns thick, relaxed SiGe layers for solar cell application. The layers were characterized by means of electron beam induced current (EBIC), X-ray microanalysis (EDX), backscattered electrons, and Hall effect analysis.

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LPE和CVD生长SiGe层的电学性质

在本文中，我们介绍了用于太阳能电池的几微米厚，松弛的SiGe层的电学性质。通过电子束感应电流(EBIC)、x射线微分析(EDX)、背散射电子和霍尔效应分析对各层进行了表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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