退火和掺铍低温生长砷化镓的超快响应时间和增强的光学非线性

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785085

M. Haiml, A. Prasad, F. Morier-Genoud, U. Siegner, U. Keller, E. Weber

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引用次数: 3

摘要

我们定量地研究了退火和掺铍低温生长砷化镓的光学非线性。在20-fs时间尺度上对吸收调制的时间衰减进行了测量，补充了这项研究。我们的研究结果表明，LT GaAs的掺杂和退火都可以产生一种具有优异性能的材料，用于超快全光开关应用。

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Ultrafast response times and enhanced optical nonlinearity in annealed and Beryllium doped low-temperature grown GaAs

We have quantitatively studied the optical nonlinearity in annealed and in beryllium doped low-temperature grown (LT) GaAs. This study has been complemented by measurements of the temporal decay of the absorption modulation on the 20-fs time scale. Our results show that both be doping and annealing of LT GaAs yield a material with superior properties for ultrafast all-optical switching applications.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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