1.5 MeV Se离子注入Al/sub -x/ Ga/sub - 1-x/As的x射线研究

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785104

W. Wierzchowski, K. Wieteska, A. Turos, W. Graeff, R. Groetzschel

{"title":"1.5 MeV Se离子注入Al/sub -x/ Ga/sub - 1-x/As的x射线研究","authors":"W. Wierzchowski, K. Wieteska, A. Turos, W. Graeff, R. Groetzschel","doi":"10.1109/SIM.1998.785104","DOIUrl":null,"url":null,"abstract":"Al/sub x/Ga/sub 1-x/As epitaxial layers with x=0.45 and low dislocation density, implanted with 1.5 MeV Se/sup +/ ions to doses of 6/spl times/10/sup 13/-1/spl times/10/sup 15/ ions/cm/sup 2/ were studied with X-ray diffraction methods using conventional and synchrotron X-ray sources. The implantation caused considerable increase of lattice parameter reaching the maximum at the dose of 2/spl times/10/sup 14/ ions/cm/sup 2/. It was also found that the implantation produced a relatively thick layer with almost constant lattice parameter. The applied doses did not produce lattice amorphization at room temperature.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"X-ray studies of Al/sub x/Ga/sub 1-x/As implanted with 1.5 MeV Se ions\",\"authors\":\"W. Wierzchowski, K. Wieteska, A. Turos, W. Graeff, R. Groetzschel\",\"doi\":\"10.1109/SIM.1998.785104\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Al/sub x/Ga/sub 1-x/As epitaxial layers with x=0.45 and low dislocation density, implanted with 1.5 MeV Se/sup +/ ions to doses of 6/spl times/10/sup 13/-1/spl times/10/sup 15/ ions/cm/sup 2/ were studied with X-ray diffraction methods using conventional and synchrotron X-ray sources. The implantation caused considerable increase of lattice parameter reaching the maximum at the dose of 2/spl times/10/sup 14/ ions/cm/sup 2/. It was also found that the implantation produced a relatively thick layer with almost constant lattice parameter. The applied doses did not produce lattice amorphization at room temperature.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785104\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

用x射线衍射方法研究了x=0.45、位错密度低的Al/sub x/Ga/sub 1-x/As外延层，在1.5 MeV Se/sup +/离子注入剂量为6/spl倍/10/sup 13/ 1/spl倍/10/sup 15/离子/cm/sup 2/的情况下，采用常规x射线和同步加速器x射线源。注入引起晶格参数显著增加，在剂量为2/spl倍/10/sup 14/ ions/cm/sup 2/时达到最大值。同时发现，注入后形成了一个相对较厚且晶格参数几乎不变的层。施加的剂量在室温下不产生晶格非晶化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

X-ray studies of Al/sub x/Ga/sub 1-x/As implanted with 1.5 MeV Se ions

Al/sub x/Ga/sub 1-x/As epitaxial layers with x=0.45 and low dislocation density, implanted with 1.5 MeV Se/sup +/ ions to doses of 6/spl times/10/sup 13/-1/spl times/10/sup 15/ ions/cm/sup 2/ were studied with X-ray diffraction methods using conventional and synchrotron X-ray sources. The implantation caused considerable increase of lattice parameter reaching the maximum at the dose of 2/spl times/10/sup 14/ ions/cm/sup 2/. It was also found that the implantation produced a relatively thick layer with almost constant lattice parameter. The applied doses did not produce lattice amorphization at room temperature.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

自引率

0.00%

发文量