Oxidation of GaAlAs red LED surface due to light irradiation

Abstract

Formation of a light absorptive layer on the surface of a GaAlAs LED due to light irradiation has been studied by irradiating red, green light and infrared ray LEDs on a pellet of a GaAlAs device. The Auger electron spectroscopy depth profiles and electron probe micro analysis have revealed that the light absorptive layer is formed on the n-site surface by the light irradiation. Photocatalysis reactions may play a very important role in the formation of the layer.