{"title":"一种检测SiC体晶结构缺陷的新技术","authors":"T. Argunova, J. Baruchel, J. Hartwig","doi":"10.1109/SIM.1998.785127","DOIUrl":null,"url":null,"abstract":"Structural defects in sublimation sandwich grown SiC wafers of a large area have been studied with diffraction, absorption and phase contrast imaging techniques by using highly parallel X-ray flux. The contrast appeared due to either tilt, strain or density gradients between a matrix and a defect. Coherence properties of hard X-ray beams of third-generation synchrotron radiation sources such as the ESRF, were utilized to produce phase contrast in a free-space propagation mode. The nature of the observed defects has been confirmed by scanning electron and optical microscopy data.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new technique for the detection of structural defects in SiC bulk crystals\",\"authors\":\"T. Argunova, J. Baruchel, J. Hartwig\",\"doi\":\"10.1109/SIM.1998.785127\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Structural defects in sublimation sandwich grown SiC wafers of a large area have been studied with diffraction, absorption and phase contrast imaging techniques by using highly parallel X-ray flux. The contrast appeared due to either tilt, strain or density gradients between a matrix and a defect. Coherence properties of hard X-ray beams of third-generation synchrotron radiation sources such as the ESRF, were utilized to produce phase contrast in a free-space propagation mode. The nature of the observed defects has been confirmed by scanning electron and optical microscopy data.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785127\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785127","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new technique for the detection of structural defects in SiC bulk crystals
Structural defects in sublimation sandwich grown SiC wafers of a large area have been studied with diffraction, absorption and phase contrast imaging techniques by using highly parallel X-ray flux. The contrast appeared due to either tilt, strain or density gradients between a matrix and a defect. Coherence properties of hard X-ray beams of third-generation synchrotron radiation sources such as the ESRF, were utilized to produce phase contrast in a free-space propagation mode. The nature of the observed defects has been confirmed by scanning electron and optical microscopy data.