The electrical properties of semi-insulating GaAs analysed as a relaxation semiconductor

Abstract

From experiments on semi-insulating (SI) GaAs diodes it is shown that the results can be analysed using relaxation semiconductor theory. This is most apparent for P-SI-N or Schottky-SI-Ohmic diodes and the agreement improves after irradiation when the ratio of generation-recombination (g-r) centres to deep levels increases.