发布求助
文献互助 智能选刊 最新文献

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)最新文献

筛选
英文 中文
Semi-insulating properties of GaAs with artificially buried W discs 人工埋W片GaAs的半绝缘性能
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785076
L. Wernersson, A. Litwin, L. Samuelson, W. Seifert
{"title":"Semi-insulating properties of GaAs with artificially buried W discs","authors":"L. Wernersson, A. Litwin, L. Samuelson, W. Seifert","doi":"10.1109/SIM.1998.785076","DOIUrl":"https://doi.org/10.1109/SIM.1998.785076","url":null,"abstract":"In this paper we review our experiments in which a controlled formation of semi-insulating GaAs by introduction of buried metal discs is demonstrated. A tungsten disc matrix is embedded in an epitaxial layer by epitaxial overgrowth and the current transport perpendicular to the lattice is studied. The discs form Schottky barriers to the surrounding GaAs, which is depleted from free carriers. The conductance is demonstrated to vary by 7 orders of magnitude in structures as a function of varying disc separation. Using such a semi-insulating structure with a high disc density, the buried contacts have been characterised by photo-conductivity measurements and space-charge spectroscopy. The experimental results are in excellent agreement with an analytical model for depletion and charging of nano-scale Schottky barriers.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"11 suppl_1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122870002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Doping and segregation effects in AlGaN systems AlGaN体系中的掺杂和偏析效应
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785114
P. Bogusławski, J. Bernholc
{"title":"Doping and segregation effects in AlGaN systems","authors":"P. Bogusławski, J. Bernholc","doi":"10.1109/SIM.1998.785114","DOIUrl":"https://doi.org/10.1109/SIM.1998.785114","url":null,"abstract":"Doping properties of substitutional C, Si, Ge, Be, and Se impurities in wurtzite GaN and AlN are studied by quantum molecular dynamics. We investigate effects that potentially quench doping efficiency, namely the self-compensation and the compensation by native defects. We also predict a strong interfacial segregation of Se/sub N/, C/sub N/, and nitrogen vacancies at the AlN/GaN heterointerface towards the GaN layer.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122925105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers 用于固体激光器被动锁模的离子注入反谐振法布里珀罗饱和吸收体
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785086
M. Lederer, B. Luther-Davies, H. Tan, C. Jagadish
{"title":"An ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers","authors":"M. Lederer, B. Luther-Davies, H. Tan, C. Jagadish","doi":"10.1109/SIM.1998.785086","DOIUrl":"https://doi.org/10.1109/SIM.1998.785086","url":null,"abstract":"We have fabricated GaAs based anti-resonant Fabry-Perot saturable absorbers (A-FPSAs) for passively mode-locking near infrared solid state lasers, using Metal Organic Vapour Phase Epitaxy (MOVPE) growth followed by ion-implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterised for their large signal response including saturation fluence, modulation depth and non-bleachable losses-important parameters for passive mode-locking. Finally we demonstrate mode-locking using our samples within a Ti:sapphire laser observing stable and reliable self-starting, pulses in the 100 fs range, and 50 nm tunability. Results of computer simulations are in good agreement with the experiments.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127682106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of single and double barrier pseudomorphic doped-channel GaInP/GaInAs/GaAs HFET's: performance and isolation properties 单势垒和双势垒伪晶掺杂通道GaInP/GaInAs/GaAs HFET的性能和隔离性能比较
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785094
S. McLaughlin, Xiangang Xu, S. Watkins, C. Bolognesi
{"title":"Comparison of single and double barrier pseudomorphic doped-channel GaInP/GaInAs/GaAs HFET's: performance and isolation properties","authors":"S. McLaughlin, Xiangang Xu, S. Watkins, C. Bolognesi","doi":"10.1109/SIM.1998.785094","DOIUrl":"https://doi.org/10.1109/SIM.1998.785094","url":null,"abstract":"Doped-channel GaInP/GaInAs/GaAs pseudomorphic heterostructure field-effect transistors (HFETs) were fabricated both with and without a GaInP barrier layer under the GaInAs channel. Two sets of alloy compositions were investigated: Ga/sub 0.85/In/sub 0.15/As channels with Ga/sub 0.51/In/sub 0.49/P barriers, and Ga/sub 0.70/In/sub 0.30/As channels with Ga/sub 0.62/In/sub 0.38/P barriers. For each composition, 1.1 /spl mu/m gate length devices with single and double barrier structures showed similar maximum drain currents (I/sub dmas/), and peak transconductances (g/sub m/), while the double barrier devices showed reduced output conductances (g/sub ds/) compared to the single barrier devices, resulting in a 30-50% larger voltage gain. RF measurements showed a higher maximum frequency of oscillation (f/sub max/) for the double barrier devices of both compositions. For mesa etch isolation of the double barrier devices, it was found to be necessary to remove the bottom GaInP barrier layer to achieve satisfactory device isolation. We speculate that a parasitic 2-dimensional electron gas may be formed at the interface between the bottom GaInP barrier and the GaAs buffer layer.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122324277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Be-related traps in Al/sub 0.5/Ga/sub 0.5/As MBE layers Al/sub - 0.5/Ga/sub - 0.5/As MBE层中be相关圈闭
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785100
J. Szatkowski, E. Płaczek-Popko, K. Sieraňski, O. Hansen
{"title":"Be-related traps in Al/sub 0.5/Ga/sub 0.5/As MBE layers","authors":"J. Szatkowski, E. Płaczek-Popko, K. Sieraňski, O. Hansen","doi":"10.1109/SIM.1998.785100","DOIUrl":"https://doi.org/10.1109/SIM.1998.785100","url":null,"abstract":"In this paper we report on studies of deep levels in Be doped Al/sub 0.5/Ga/sub 0.5/As by deep level transient spectroscopy measurements. The aim of the studies was to investigate which of the observed hole traps may be Be related. For this purpose samples of four different Be concentrations ranging from 10/sup 15/ cm/sup -3/ to 10/sup 18/ cm/sup -3/ were prepared. For the samples of the highest Be concentration the DLTS measurements reveal the presence of four hole traps whereas in the others six traps are observed. Four of the observed traps can be attributed to Be incorporation.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"21 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116582026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of growth and annealing conditions on the structural quality of LT-GaAs layers grown on [111]B substrate by molecular beam epitaxy 生长和退火条件对分子束外延在[111]B衬底上生长的LT-GaAs层结构质量的影响
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785084
C. Guerret-Piecourt, M. Toufella, E. Bedel, P. Puech, G. Benassayag, V. Bardinal, C. Fontaine, A. Claverie, R. Carles
{"title":"The influence of growth and annealing conditions on the structural quality of LT-GaAs layers grown on [111]B substrate by molecular beam epitaxy","authors":"C. Guerret-Piecourt, M. Toufella, E. Bedel, P. Puech, G. Benassayag, V. Bardinal, C. Fontaine, A. Claverie, R. Carles","doi":"10.1109/SIM.1998.785084","DOIUrl":"https://doi.org/10.1109/SIM.1998.785084","url":null,"abstract":"The structural quality of the layers grown at low temperature on (111)B GaAs is investigated by Raman spectroscopy and transmission electron microscopy. It is shown that both the amorphous layers grown at 150/spl deg/C and the defect-rich layers (mostly based on multiple twinning) grown at 250/spl deg/C can recover perfect crystalline quality upon annealing provided, (i) they are not too thick (<350 nm) and, (ii) the annealing temperature is high enough. Both conditions are necessary to allow the reordering of the layer initiated at the interface to propagate towards the surface without being stopped at dislocation nodes.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134361760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Tuning the luminescence emission in III-V self-forming quantum dots: influence of structure, material system and dot/barrier interface III-V型自形成量子点的发光调谐:结构、材料体系和点/势垒界面的影响
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785106
R. Leon
{"title":"Tuning the luminescence emission in III-V self-forming quantum dots: influence of structure, material system and dot/barrier interface","authors":"R. Leon","doi":"10.1109/SIM.1998.785106","DOIUrl":"https://doi.org/10.1109/SIM.1998.785106","url":null,"abstract":"Tuning the emission in semiconductor quantum dots [QDs] has be attained using different strategies: by changing the material composition in the dot/barriers; interdiffusion or intermixing; using a graded growth rate; and changing the quantum box average dimensions and concentrations for fixed ternary compositions. The effects of these structural and compositional variations on the luminescence properties of these structures is presented and discussed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"514 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133307620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mechanisms of generation and atomic structure of defects in III-nitrides epitaxial systems for device applications 器件用iii -氮化物外延系统缺陷的产生机制和原子结构
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785118
S. Ruvimov, Z. Liliental-Weber, J. Washburn, H. Amano, I. Akasaki
{"title":"Mechanisms of generation and atomic structure of defects in III-nitrides epitaxial systems for device applications","authors":"S. Ruvimov, Z. Liliental-Weber, J. Washburn, H. Amano, I. Akasaki","doi":"10.1109/SIM.1998.785118","DOIUrl":"https://doi.org/10.1109/SIM.1998.785118","url":null,"abstract":"High resolution electron microscopy was applied to study the atomic structure of defects (dislocations, stacking faults, grain boundaries and nanopipes) and the mechanisms of their generation in III-nitrides epitaxial layers grown by MOVPE on sapphire. Formation of vertical boundaries in epitaxial layers was often associated with specific defects at the interface with a substrate. Dislocation generation and annihilation were shown to be mainly growth-related processes and, hence, can be controlled by the growth conditions, especially during the first growth stages.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131830811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structural and photoluminescence analysis of Er implanted LT-GaAs 铒注入LT-GaAs的结构和光致发光分析
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785090
R. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P. Klein, P. Specht, E. Weber
{"title":"Structural and photoluminescence analysis of Er implanted LT-GaAs","authors":"R. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P. Klein, P. Specht, E. Weber","doi":"10.1109/SIM.1998.785090","DOIUrl":"https://doi.org/10.1109/SIM.1998.785090","url":null,"abstract":"Characteristic 1.54 /spl mu/m Er/sup 3+/ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs (Be doped and undoped samples). Cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for elevated temperature implants up to an Er total fluence of 1.36/spl times/10/sup 14/ Er/cm/sup 2/. No Er emission was observed from any of the as-implanted samples. Post-implantation annealing optimized the Er PL emission intensity near 650/spl deg/C for Be doped samples, while for undoped samples it was near 750/spl deg/C anneal. The beginning of Er precipitation was observed after 750/spl deg/C annealing for the above Er fluence but, on increasing the Er concentration by higher implantation fluences, it was observed after annealing at 650/spl deg/C. These precipitates are likely ErAs.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116421234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical processes in In/sub x/Ga/sub 1-x/N epitaxial films grown by metalorganic chemical vapor deposition 金属有机化学气相沉积in /sub x/Ga/sub 1-x/N外延膜的光学过程
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785116
W. Shan, J. Ager, W. Walukiewicz, E. Haller
{"title":"Optical processes in In/sub x/Ga/sub 1-x/N epitaxial films grown by metalorganic chemical vapor deposition","authors":"W. Shan, J. Ager, W. Walukiewicz, E. Haller","doi":"10.1109/SIM.1998.785116","DOIUrl":"https://doi.org/10.1109/SIM.1998.785116","url":null,"abstract":"We have studied the properties of optical transitions in In/sub x/Ga/sub 1-x/N epitaxial films (0<x<0.2) grown by metalorganic chemical vapor deposition (MOCVD). The fundamental band gap energies of the In/sub x/Ga/sub 1-x/N alloys were determined using photomodulation spectroscopy measurements and the variation of the fundamental band gap was measured as a function of temperature. The effects of pressure on the photoluminescence (PL) emission lines were studied. Our results show that PL originates from effective-mass conduction-band states. The anomalous temperature dependence of the PL peak shift and linewidth and of the Stokes shift between the photoreflectance (PR) and PL lines is explained by composition fluctuations in as-grown InGaN alloys.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"187 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114646961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信