Doping and segregation effects in AlGaN systems

Abstract

Doping properties of substitutional C, Si, Ge, Be, and Se impurities in wurtzite GaN and AlN are studied by quantum molecular dynamics. We investigate effects that potentially quench doping efficiency, namely the self-compensation and the compensation by native defects. We also predict a strong interfacial segregation of Se/sub N/, C/sub N/, and nitrogen vacancies at the AlN/GaN heterointerface towards the GaN layer.