{"title":"金属有机化学气相沉积in /sub x/Ga/sub 1-x/N外延膜的光学过程","authors":"W. Shan, J. Ager, W. Walukiewicz, E. Haller","doi":"10.1109/SIM.1998.785116","DOIUrl":null,"url":null,"abstract":"We have studied the properties of optical transitions in In/sub x/Ga/sub 1-x/N epitaxial films (0<x<0.2) grown by metalorganic chemical vapor deposition (MOCVD). The fundamental band gap energies of the In/sub x/Ga/sub 1-x/N alloys were determined using photomodulation spectroscopy measurements and the variation of the fundamental band gap was measured as a function of temperature. The effects of pressure on the photoluminescence (PL) emission lines were studied. Our results show that PL originates from effective-mass conduction-band states. The anomalous temperature dependence of the PL peak shift and linewidth and of the Stokes shift between the photoreflectance (PR) and PL lines is explained by composition fluctuations in as-grown InGaN alloys.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"187 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical processes in In/sub x/Ga/sub 1-x/N epitaxial films grown by metalorganic chemical vapor deposition\",\"authors\":\"W. Shan, J. Ager, W. Walukiewicz, E. Haller\",\"doi\":\"10.1109/SIM.1998.785116\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied the properties of optical transitions in In/sub x/Ga/sub 1-x/N epitaxial films (0<x<0.2) grown by metalorganic chemical vapor deposition (MOCVD). The fundamental band gap energies of the In/sub x/Ga/sub 1-x/N alloys were determined using photomodulation spectroscopy measurements and the variation of the fundamental band gap was measured as a function of temperature. The effects of pressure on the photoluminescence (PL) emission lines were studied. Our results show that PL originates from effective-mass conduction-band states. The anomalous temperature dependence of the PL peak shift and linewidth and of the Stokes shift between the photoreflectance (PR) and PL lines is explained by composition fluctuations in as-grown InGaN alloys.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"187 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785116\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785116","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}