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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)最新文献

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Influence of growth conditions on the As antisites, As/sub Ga//sup 0/ and As/sub Ga//sup +/ concentrations in the low temperature GaAs MBE growth: A first theoretical study 低温GaAs MBE生长条件对As对位、As/sub Ga//sup 0/和As/sub Ga//sup +/浓度的影响:首次理论研究
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785087
N. Krishnan, R. Venkat, D. Dorsey
{"title":"Influence of growth conditions on the As antisites, As/sub Ga//sup 0/ and As/sub Ga//sup +/ concentrations in the low temperature GaAs MBE growth: A first theoretical study","authors":"N. Krishnan, R. Venkat, D. Dorsey","doi":"10.1109/SIM.1998.785087","DOIUrl":"https://doi.org/10.1109/SIM.1998.785087","url":null,"abstract":"A novel theoretical investigation is employed to study the influence of surface dynamics in low temperature MBE growth of GaAs. A kinetic growth model along with the charge neutrality equation is used to find the distribution of As antisites between the neutral and charged species using the bulk Ga vacancy concentrations obtained from simulations for the first time. The experimentally observed temperature and as flux dependencies of the As antisite concentrations are successfully reproduced by the model. The As/sub Ga//sup 0/ and As/sub Ga//sup +/ concentrations saturate with As flux for a given temperature due to saturation of an amorphous, physisorbed As surface layer which acts as the reservoir for As antisite incorporation. The As antisite concentration saturates at lower value for higher temperature due to larger evaporation of As antisite from the crystalline state. It is observed that both As/sub Ga//sup 0/ and As/sub Ga//sup +/ concentrations decrease with increase in temperature. While the decrease of As/sub Ga//sup 0/ concentration with temperature is related to the direct evaporation of As antisite from the crystalline state, the decrease of As/sub ga//sup +/ is related to a decrease in the Ga vacancy concentration.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126886632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implant isolation study of In/sub 0.53/Ga/sub 0.47/As In/sub 0.53/Ga/sub 0.47/As的植体分离研究
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785070
M. Almonte, K. Yu, E. Haller, M. Ridgway, H. Hou, J. Mirecki-Millunchick
{"title":"Implant isolation study of In/sub 0.53/Ga/sub 0.47/As","authors":"M. Almonte, K. Yu, E. Haller, M. Ridgway, H. Hou, J. Mirecki-Millunchick","doi":"10.1109/SIM.1998.785070","DOIUrl":"https://doi.org/10.1109/SIM.1998.785070","url":null,"abstract":"Effects of implantation in In/sub 0.53/Ga/sub 0.47/As due to damage by implantation of Ne/sup +/ ions and to compensation by implantation of Fe/sup +/ ions are reported. The former only involves damage induced effects while the latter leads to damage and dopant induced compensation. In addition, the changes in the electrical properties of the layers are correlated to the lattice damage (damage induced effects) and/or the diffusion of the compensating dopants (dopant induced compensation). Structural characterization of the layers is performed with channeling Rutherford Backscattering Spectrometry (RBS). The distribution of the compensating dopants in the as-implanted and annealed layers is examined by Secondary Ion Mass Spectrometry (SIMS). The thermal stability of these damage and compensation induced effects producing implant isolation is discussed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121532351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semi-insulating InP crystal wafers characterized by different nondestructive techniques 采用不同无损技术表征的半绝缘InP晶圆
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785073
M. Yamada, M. Fukuzawa, M. Akita, A. Herms, M. Uchida, O. Oda
{"title":"Semi-insulating InP crystal wafers characterized by different nondestructive techniques","authors":"M. Yamada, M. Fukuzawa, M. Akita, A. Herms, M. Uchida, O. Oda","doi":"10.1109/SIM.1998.785073","DOIUrl":"https://doi.org/10.1109/SIM.1998.785073","url":null,"abstract":"Nondestructive techniques of mapping of residual strain, photoluminescence and resistivity were utilized to optimize the multiple wafer annealing (MWA) procedure of undoped or slightly Fe doped InP crystal wafers under phosphorous atmosphere. The annealing procedure optimized did not additionally produce unwanted residual strain but reduced and homogenized it. In conclusion, MWA has proved to be a promising method to obtain semi-insulating InP crystals without undesired high Fe doping.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128357806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Change of electrical and structural properties of non-stoichiometric GaAs through Be doping Be掺杂对非化学计量GaAs电学和结构性能的影响
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785082
M. Luysberg, P. Specht, K. Thul, Z. Liliental-Weber, E. Weber
{"title":"Change of electrical and structural properties of non-stoichiometric GaAs through Be doping","authors":"M. Luysberg, P. Specht, K. Thul, Z. Liliental-Weber, E. Weber","doi":"10.1109/SIM.1998.785082","DOIUrl":"https://doi.org/10.1109/SIM.1998.785082","url":null,"abstract":"he effect of Be doping on the electrical and structural properties of low temperature MBE grown GaAs (LT-GaAs) is investigated for high Be doping levels. As in undoped LT-GaAs As precipitates form upon annealing. However, from the Ostwald ripening of As precipitates a considerably larger activation energy for As diffusion is found in Be doped samples. Therefore, Be doping retards the growth of As precipitates and leads to a thermal stabilization. The electrical properties of as-grown and annealed samples can be explained by the residual point defect model. After short annealing times highly resistive material is obtained, i.e. the Fermi level is pinned at the deep As/sub Ga/ donor midgap states.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133183904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Lateral oxidation of AlAs thin films AlAs薄膜的侧向氧化
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785113
Z. Liliental-Weber, O. Richter, W. Świder, M. Li, G.S. Li, C. Chang-Hasnain, E. Weber
{"title":"Lateral oxidation of AlAs thin films","authors":"Z. Liliental-Weber, O. Richter, W. Świder, M. Li, G.S. Li, C. Chang-Hasnain, E. Weber","doi":"10.1109/SIM.1998.785113","DOIUrl":"https://doi.org/10.1109/SIM.1998.785113","url":null,"abstract":"Transmission electron microscopy was used for characterization of microstructure resulting from wet oxidation of AlAs layers of different thicknesses separated by a 20 nm thick GaAs layer. In general, the oxidation rate was related to the AlAs layer thickness, but some deviation from this rule was observed for layer thicknesses in the range of 65 to 30 nm. Accumulation of As precipitates at the AlAs/GaAs/AlAs interfaces and in the GaAs separation layers was observed. A build up of stress at these interfaces occasionally caused formation of stacking faults close to the oxidation front. Large differences in interface abruptness were observed for direct (AlAs on GaAs) and inverted (GaAs on AlAs) interfaces. The oxidation front was asymmetric with the faster front close to the inverted interface.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133415434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium 掺杂铍的热稳定低温生长砷化镓的时间分辨反射率测量
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785092
R. Zhao, P. Specht, R. Lutz, N. Pu, S. Jeong, J. Bokor, E. Weber
{"title":"Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium","authors":"R. Zhao, P. Specht, R. Lutz, N. Pu, S. Jeong, J. Bokor, E. Weber","doi":"10.1109/SIM.1998.785092","DOIUrl":"https://doi.org/10.1109/SIM.1998.785092","url":null,"abstract":"The influence of Be-doping on carrier lifetime in low temperature grown (LT) GaAs has been studied using time-resolved reflectivity measurement. The ultrafast photogenerated carrier lifetime decreases with increasing Be doping concentration, because the total amount of excess As, i.e., arsenic antisites (As/sub Ga/), and the ionized arsenic antisites are increased due to mechanical and electrical compensation between As/sub Ga/, and Be acceptor. It was observed that the carrier lifetime in Be-doped LT-GaAs can be even shorter after high temperature annealing, which is contrary to the behavior of undoped samples.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"6 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114122830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of key physical parameters of bulk semi-insulating GaAs for radiation detector fabrication 辐射探测器用大块半绝缘砷化镓关键物理参数研究
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785096
F. Dubecký, J. Darmo, M. Krempaský, V. Nečas, P. Pelfer, P. Boháček, M. Sekáčová
{"title":"Study of key physical parameters of bulk semi-insulating GaAs for radiation detector fabrication","authors":"F. Dubecký, J. Darmo, M. Krempaský, V. Nečas, P. Pelfer, P. Boháček, M. Sekáčová","doi":"10.1109/SIM.1998.785096","DOIUrl":"https://doi.org/10.1109/SIM.1998.785096","url":null,"abstract":"Study of selected physical properties of bulk semi-insulating (SI) GaAs grown by LEC and VGF techniques, undoped and Cr-doped is presented. Conductivity, Hall, GDMS, I-V and C-V techniques were used for material and radiation detector characterisation. Detection performances of detectors have been tested using /sup 57/Co source of 122 keV gamma rays. Correlation between the physical properties of base materials and performances of detectors is presented. Physical parameters suitable for estimation of the detector grade bulk SI GaAs are discussed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133031984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
GaAs and SiC quantum wire arrays: fabrication and characterisation 砷化镓和碳化硅量子线阵列:制造和表征
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785108
V. Samuilov, I. A. Bashmakov, I.B. Butylina, I. Grigorieva, V. Ksenevich, L.V. Solovjova
{"title":"GaAs and SiC quantum wire arrays: fabrication and characterisation","authors":"V. Samuilov, I. A. Bashmakov, I.B. Butylina, I. Grigorieva, V. Ksenevich, L.V. Solovjova","doi":"10.1109/SIM.1998.785108","DOIUrl":"https://doi.org/10.1109/SIM.1998.785108","url":null,"abstract":"We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128787703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs 基于半绝缘砷化镓的肖特基二极管中准中性区的形成
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785095
M. Rogalla, K. Runge
{"title":"Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs","authors":"M. Rogalla, K. Runge","doi":"10.1109/SIM.1998.785095","DOIUrl":"https://doi.org/10.1109/SIM.1998.785095","url":null,"abstract":"A model is developed for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors. The model is based on a field-enhanced electron capture of the EL2 defect. The influence of the compensation mechanism in SI GaAs on the field distribution and leakage current density of the detectors is discussed. The detailed understanding allows a device optimisation.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127972834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metastable defects in CdMnTe:Ga CdMnTe:Ga的亚稳态缺陷
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785132
J. Szatkowski, E. Płaczek-Popko, K. Sieraňski, B. Bieg
{"title":"Metastable defects in CdMnTe:Ga","authors":"J. Szatkowski, E. Płaczek-Popko, K. Sieraňski, B. Bieg","doi":"10.1109/SIM.1998.785132","DOIUrl":"https://doi.org/10.1109/SIM.1998.785132","url":null,"abstract":"Deep levels were studied in bulk Ga doped Cd/sub 0.99/Mn/sub 0.01/Te and Cd/sub 0.95/Mn/sub 0.05/Te by DLTS method. Some of observed electron traps had strong temperature dependent capture cross-sections. Activation energies for these levels obtained from Arrhenius plots were equal 0.24 eV for both types of samples and 0.53 eV in Cd/sub 0.95/Mn/sub 0.05/Te. Energetic barriers for capture processes determined from the temperature dependence of capture cross sections for these traps were found to be equal 0.2 eV for the level in Cd/sub 0.99/Mn/sub 0.01/Te and 0.15 eV and 0.23 eV for the two levels in Cd/sub 0.95/Mn/sub 0.05/Te. These traps are possible candidates responsible for persistent photoconductivity observed in both materials.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126446484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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