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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)最新文献

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Residual strain in a zinc blende Mn/sub 1-x/Mg/sub x/Te layers grown by molecular beam epitaxy 分子束外延生长锌闪锌矿Mn/sub - 1-x/Mg/sub -x/ Te层的残余应变
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785129
E. Dynowska, J. Bąk-Misiuk, E. Janik, J. Trela, T. Wojtowicz
{"title":"Residual strain in a zinc blende Mn/sub 1-x/Mg/sub x/Te layers grown by molecular beam epitaxy","authors":"E. Dynowska, J. Bąk-Misiuk, E. Janik, J. Trela, T. Wojtowicz","doi":"10.1109/SIM.1998.785129","DOIUrl":"https://doi.org/10.1109/SIM.1998.785129","url":null,"abstract":"The residual strain in Mn/sub 1-x/MgTe layers grown by Molecular Beam Epitaxy (MBE) on CdTe/GaAs[001] substrates has been investigated by X-ray diffraction methods. We confirmed the existence of a tensile strain in the case of layers covered by an additional CdTe cap while in uncapped layers we found a compressive strain. The thermal expansion measurements between 300-520 K revealed an anisotropy of the inplane and out-of-plane thermal expansion coefficients. This helps to understand occurrence of the compressive strain of uncapped layers in terms of a tentative model of relaxation process in both types of layers.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121361320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Persistent photoconductivity in nitrogen-doped p-type Zn(S)Se/GaAs heterojunctions 氮掺杂p型Zn(S)Se/GaAs异质结的持续光电导率
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785133
D. Seghier, H. Gíslason
{"title":"Persistent photoconductivity in nitrogen-doped p-type Zn(S)Se/GaAs heterojunctions","authors":"D. Seghier, H. Gíslason","doi":"10.1109/SIM.1998.785133","DOIUrl":"https://doi.org/10.1109/SIM.1998.785133","url":null,"abstract":"Nitrogen-doped p-type ZnSe grown by molecular beam epitaxy on p-type GaAs shows persistent photocurrent up to room temperature. A typical decay consists of an initial stretched-exponential transient with a thermally activated decay constant, and a subsequent long transient. We attribute the effect to metastable centers in the ZnSe near the interface to the GaAs substrate, on the one hand, and tunneling of photo-excited holes trapped in a two-dimensional quantum well at the heterojunction through the barrier to the ZnSe, on the other hand.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121479152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth and orientation of GaN epilayers on NdGaO/sub 3/ by hydride vapor phase epitaxy 氢化物气相外延在NdGaO/ sub3 /上生长GaN薄膜及其取向
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785071
A. Wakahara, T. Nishida, K. Kawano, A. Yoshida, Y. Seki, O. Oda
{"title":"Growth and orientation of GaN epilayers on NdGaO/sub 3/ by hydride vapor phase epitaxy","authors":"A. Wakahara, T. Nishida, K. Kawano, A. Yoshida, Y. Seki, O. Oda","doi":"10.1109/SIM.1998.785071","DOIUrl":"https://doi.org/10.1109/SIM.1998.785071","url":null,"abstract":"Growth characteristics of GaN on NdGaO/sub 3/ [011] and (101) substrates by hydride vapor phase epitaxy are investigated. The epitaxial relationship is found to be GaN(0001)/NdGaO/sub 3/ [011] with GaN [10-10]//NdGaO/sub 3/ [100] for NdGaO/sub 3/ [011] and GaN(11-24)/NdGaO/sub 3/[101] with GaN[11-2-4]//NdGaO/sub 3/ [10-1] for the NdGaO/sub 3/ [101]. When the GaN is directly grown on NdGaO3/sub /substrates around 1000/spl deg/C, no deposits of GaN are obtained due to the reduction of the NdGaO3/sub s/ substrate by the presence of NH/sub 3/ at high temperature. In order to avoid the substrate reduction, low-temperature grown GaN is effective as the protective layer.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123608375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High pressure solution growth and physical properties of GaN crystals 氮化镓晶体的高压溶液生长和物理性质
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785065
I. Grzegory
{"title":"High pressure solution growth and physical properties of GaN crystals","authors":"I. Grzegory","doi":"10.1109/SIM.1998.785065","DOIUrl":"https://doi.org/10.1109/SIM.1998.785065","url":null,"abstract":"The recent results in high pressure crystallization of GaN from the solutions of N in pure Ga and in its alloys with II group metals (Mg, Ca, Zn) are discussed. It is shown that high resistivity (10/sup 4/-10/sup 6/ /spl Omega/cm) GaN crystals of improved structural quality can be grown from solutions containing Mg. The structural, electrical and optical properties properties of GaN crystals grown without and with the intentional doping are compared. It is also shown that atomically flat, thermally stable surfaces of GaN substrates can be obtained by mechanical and mechano-chemical polishing. Some most interesting results concerning homoepitaxial growth by MOCVD and MBE are reviewed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129442102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current-voltage characteristic of n-i-n structures made of semi-insulating GaAs 半绝缘砷化镓n-i-n结构的电流电压特性
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785080
J. Wu
{"title":"Current-voltage characteristic of n-i-n structures made of semi-insulating GaAs","authors":"J. Wu","doi":"10.1109/SIM.1998.785080","DOIUrl":"https://doi.org/10.1109/SIM.1998.785080","url":null,"abstract":"The current-voltage characteristic of semi-insulating GaAs is investigated by measuring the leakage current between ohmic contacts on SI GaAs. The measurement was performed on both a low-dislocation and a high-dislocation substrate grown by the liquid encapsulated Czochralski method and in addition, on a low-temperature (LT) GaAs layer grown by molecular-beam epitaxy (MBE) at very low temperature. It was found that the substrate current conduction in the low voltage range was related to the excess carrier lifetime rather than the resistivity of the substrate.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125423702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
XPS study of dependence of Au/6H-SiC Schottky barrier height on carrier concentration Au/6H-SiC肖特基势垒高度随载流子浓度的XPS研究
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785128
N. Suvorova, A. Shchukarev, I. Usov, A. Suvorov
{"title":"XPS study of dependence of Au/6H-SiC Schottky barrier height on carrier concentration","authors":"N. Suvorova, A. Shchukarev, I. Usov, A. Suvorov","doi":"10.1109/SIM.1998.785128","DOIUrl":"https://doi.org/10.1109/SIM.1998.785128","url":null,"abstract":"SiC is a wide band gap semiconductor attractive for use in high-frequency and highpower devices (FET's and IMPATT's). To realize such devices, the Schottky contact is preferable to p-n junctions because this enables low-temperature processing and facilitates further improvement of device performance. Since the performance of Schottky-based devices depends on barrier height, the optimum barrier height leading to high performance should be investigated in detail. It has been established that barrier height depends on metal work function and SiC polytype, orientation, crystallinity and the surface treatment process before the contacts formation, To the authors knowledge, however, no data have been reported for barrier heights dependence on carrier concentration. In the present work we report a Au/n-6H-SiC contacts Schottky barriers height dependence on uncompensated donor concentration (N/sub d/-N/sub a/). The barrier heights were determined by capacitance-voltage (C-V) and X-ray photoelectron spectroscopy (XPS) techniques.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128651991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The electrical properties of irradiated silicon: semi-insulating silicon 辐照硅的电学性质:半绝缘硅
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785074
B. Jones, M. McPherson, J. Santana
{"title":"The electrical properties of irradiated silicon: semi-insulating silicon","authors":"B. Jones, M. McPherson, J. Santana","doi":"10.1109/SIM.1998.785074","DOIUrl":"https://doi.org/10.1109/SIM.1998.785074","url":null,"abstract":"Clear experimental evidence is presented that irradiated silicon behaves electrically like semi-insulating GaAs and hence should be considered semi-insulating. The analysis follows that for a relaxation semiconductor.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127107982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Preliminary results for GaInAs channel MISFETs fabricated on LEC-grown ternary GaInAs substrates 在电化学生长的三元GaInAs衬底上制备GaInAs沟道misfet的初步结果
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785135
R. Poirier, G. Soerensen, C. Bolognesi, X. Xu, S. Watkins, B. Lent, D. Reid
{"title":"Preliminary results for GaInAs channel MISFETs fabricated on LEC-grown ternary GaInAs substrates","authors":"R. Poirier, G. Soerensen, C. Bolognesi, X. Xu, S. Watkins, B. Lent, D. Reid","doi":"10.1109/SIM.1998.785135","DOIUrl":"https://doi.org/10.1109/SIM.1998.785135","url":null,"abstract":"We report the first demonstration of GaInAs channel functional heterostructure field-effect transistors grown on Cr-doped LEC Ga/sub 1-x/In/sub x/As ternary substrates. The devices feature Schottky gates with high reverse breakdown voltages and a forward ideality factor of n/spl sim/1.2-1.3, good channel modulation and a complete pinch-off. The drain I-V curves display some non-idealities associated with compositional non-uniformities in the substrates. Strained channel devices with a 15% Indium composition in the active layer are also demonstrated on ternary substrates. It is expected that continued progress in GaInAs ternary substrate development will permit the fabrication of high-performance transistors relying on an Indium rich channel.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131204640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique 垂直区熔体法生长半绝缘退火砷化镓的电学和光学性质
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785069
Z. Fang, D. C. Reynolds, D. Look, M. Mier, R.L. Jones, R. Henry
{"title":"Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique","authors":"Z. Fang, D. C. Reynolds, D. Look, M. Mier, R.L. Jones, R. Henry","doi":"10.1109/SIM.1998.785069","DOIUrl":"https://doi.org/10.1109/SIM.1998.785069","url":null,"abstract":"Electrical and optical properties of undoped semi-insulating GaAs grown by the vertical zone melt (VZM) technique and annealed at 950/spl deg/C under As overpressure have been characterized. The 950/spl deg/C annealing significantly improves the uniformity and increases both EL2 concentration and mobility. Cu incorporation into the VZM materials has been observed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130906738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs 衬底深阱对GaAs mesfet导通特性的影响分析
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785136
K. Horio, A. Wakabayashi, S. Otsuka, T. Yamada
{"title":"Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs","authors":"K. Horio, A. Wakabayashi, S. Otsuka, T. Yamada","doi":"10.1109/SIM.1998.785136","DOIUrl":"https://doi.org/10.1109/SIM.1998.785136","url":null,"abstract":"Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors \"EL2\" in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density N/sub EL2//sup +/ around the channel-substrate interface can be much higher than in the ON state.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127334399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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