Current-voltage characteristic of n-i-n structures made of semi-insulating GaAs

Abstract

The current-voltage characteristic of semi-insulating GaAs is investigated by measuring the leakage current between ohmic contacts on SI GaAs. The measurement was performed on both a low-dislocation and a high-dislocation substrate grown by the liquid encapsulated Czochralski method and in addition, on a low-temperature (LT) GaAs layer grown by molecular-beam epitaxy (MBE) at very low temperature. It was found that the substrate current conduction in the low voltage range was related to the excess carrier lifetime rather than the resistivity of the substrate.