垂直区熔体法生长半绝缘退火砷化镓的电学和光学性质

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785069

Z. Fang, D. C. Reynolds, D. Look, M. Mier, R.L. Jones, R. Henry

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摘要

采用垂直区熔体(VZM)技术生长并在950/spl℃超压下退火的未掺杂半绝缘GaAs材料的电学和光学性能进行了表征。950/spl℃退火显著改善了材料的均匀性，提高了EL2浓度和迁移率。观察到Cu在VZM材料中的掺入。

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Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique

Electrical and optical properties of undoped semi-insulating GaAs grown by the vertical zone melt (VZM) technique and annealed at 950/spl deg/C under As overpressure have been characterized. The 950/spl deg/C annealing significantly improves the uniformity and increases both EL2 concentration and mobility. Cu incorporation into the VZM materials has been observed.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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