衬底深阱对GaAs mesfet导通特性的影响分析

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785136

K. Horio, A. Wakabayashi, S. Otsuka, T. Yamada

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引用次数: 1

摘要

在考虑半绝缘衬底和表面状态的情况下，对GaAs mesfet的导通特性进行了二维分析。研究发现，当断态栅极电压为深负时，会出现由EL2引起的异常电流超调。这是因为在这种情况下，处于OFF状态的半绝缘衬底中的电子也被耗尽，并且通道-衬底界面周围相应的电离EL2密度N/sub EL2//sup +/可能比ON状态高得多。

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Analysis of substrate deep-trap effects on the turn-on characteristics in GaAs MESFETs

Two-dimensional analysis of the turn-on characteristics of GaAs MESFETs is made in which deep donors "EL2" in the semi-insulating substrate and surface states are considered. It is found that abnormal current overshoot due to EL2 can be seen when the off-state gate voltage is deeply negative. This is because in such a case electrons are depleted also in the semi-insulating substrate in the OFF state, and the corresponding ionized EL2 density N/sub EL2//sup +/ around the channel-substrate interface can be much higher than in the ON state.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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