Residual strain in a zinc blende Mn/sub 1-x/Mg/sub x/Te layers grown by molecular beam epitaxy

E. Dynowska, J. Bąk-Misiuk, E. Janik, J. Trela, T. Wojtowicz
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引用次数: 0

Abstract

The residual strain in Mn/sub 1-x/MgTe layers grown by Molecular Beam Epitaxy (MBE) on CdTe/GaAs[001] substrates has been investigated by X-ray diffraction methods. We confirmed the existence of a tensile strain in the case of layers covered by an additional CdTe cap while in uncapped layers we found a compressive strain. The thermal expansion measurements between 300-520 K revealed an anisotropy of the inplane and out-of-plane thermal expansion coefficients. This helps to understand occurrence of the compressive strain of uncapped layers in terms of a tentative model of relaxation process in both types of layers.
分子束外延生长锌闪锌矿Mn/sub - 1-x/Mg/sub -x/ Te层的残余应变
用x射线衍射方法研究了CdTe/GaAs[001]衬底上分子束外延(MBE)生长的Mn/sub - 1-x/MgTe层的残余应变。我们证实了在被额外CdTe帽覆盖的层中存在拉伸应变,而在未覆盖的层中,我们发现了压缩应变。在300 ~ 520 K之间的热膨胀测量结果表明,热膨胀系数的面内和面外具有各向异性。这有助于根据两种类型的层的松弛过程的暂定模型来理解无盖层的压缩应变的发生。
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