Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)最新文献_第6页

Electron-irradiation-induced disordering of CuPt-ordered GaInP studied by TEM-mode optical spectroscopy tem模式光谱学研究了CuPt-ordered GaInP的电子辐照致无序性

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785102

Y. Ohno, Y. Kawai, S. Takeda

引用次数: 0

Changes in interdiffusion associated with thermally oxidized GaAs 与热氧化GaAs相关的互扩散变化

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785111

R. M. Cohen, Gang Li, C. Jagadish, P. Burke, M. Gal

{"title":"Changes in interdiffusion associated with thermally oxidized GaAs","authors":"R. M. Cohen, Gang Li, C. Jagadish, P. Burke, M. Gal","doi":"10.1109/SIM.1998.785111","DOIUrl":"https://doi.org/10.1109/SIM.1998.785111","url":null,"abstract":"Thermal oxidation and subsequent processing steps were found to significantly affect interdiffusion in AlGaAs/GaAs quantum wells. GaAs layers were grown on top of the quantum wells and oxidized at 450 C, and this was followed with a nonoxidizing ambient during annealing at 950 C. The resulting oxide, largely composed of Ga/sub 2/O/sub 3/, affects the native defect concentration and interdiffusion rate. Low temperature photoluminescence demonstrated that the oxidation plus annealing process significantly increased the rate of interdiffusion relative to structures which were annealed but not oxidized. However, when oxide layers covered with Al were annealed at 950 C, the Ga/sub 2/O/sub 3/ was reduced and Ga interstitials were forced into the GaAs. Using Al layers of various thickness, different quantities of Ga interstitials were injected into the epitaxial layer and a consistent reduction in interdiffusion was related to the Al layer thickness. The results are found to be consistent with previously a proposed model of interdiffusion controlled by Ga vacancies.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121620891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phosphorus and arsenic incorporation during chemical beam epitaxial growth of strained GaAs/sub 1-x/P/sub x/ layers on GaAs(100) substrates GaAs(100)衬底上应变GaAs/sub - 1-x/P/sub -x/层化学束外延生长过程中磷和砷的掺入

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785067

D. Wildt, B. J. García, J. L. Castaño, J. Piqueras

{"title":"Phosphorus and arsenic incorporation during chemical beam epitaxial growth of strained GaAs/sub 1-x/P/sub x/ layers on GaAs(100) substrates","authors":"D. Wildt, B. J. García, J. L. Castaño, J. Piqueras","doi":"10.1109/SIM.1998.785067","DOIUrl":"https://doi.org/10.1109/SIM.1998.785067","url":null,"abstract":"Phosphorus and arsenic incorporation during chemical beam epitaxial growth (CBE) of GaAs/sub 1-x/P/sub x/ using triethylgallium (TEGa), tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as precursors has been studied. Reflection high-energy electron diffraction intensity oscillations are used to measure the arsenic and phosphorus incorporation during group V controlled growth on a Ga-rich surface for different TBAs and TBAs+TBP fluxes. The so obtained phosphorus mole fraction is compared with the phosphorus composition measured by x-ray rocking curves on the strained GaAs/sub 1-x/P/sub x/ layers grown by conventional CBE with simultaneous supply of the group III and group V precursors and by atomic layer epitaxy (ALE) alternating the group III and group V fluxes. The phosphorus incorporation rate during CBE growth is lower than that measured during ALE and group V controlled growth but is still much higher than the incorporation rate reported for molecular beam epitaxial growth using elemental sources. Photoluminescence spectra show clearly strain effects in the heavy and light hole excitonic transitions.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129130002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electrical and optical properties of as-grown and electron-irradiated ZnO 生长和电子辐照ZnO的电学和光学性质

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785130

D. Look, D. C. Reynolds, J. Hemsky, J. Sizelove, R.L. Jones, C. Litton, T. Wille, G. Cantwell, W. Harsch

{"title":"Electrical and optical properties of as-grown and electron-irradiated ZnO","authors":"D. Look, D. C. Reynolds, J. Hemsky, J. Sizelove, R.L. Jones, C. Litton, T. Wille, G. Cantwell, W. Harsch","doi":"10.1109/SIM.1998.785130","DOIUrl":"https://doi.org/10.1109/SIM.1998.785130","url":null,"abstract":"Large-diameter (up to 3-inch), n-type ZnO boules grown by a new vapor-phase transport method were studied by temperature-dependent Hall-effect (TDH) and photoluminescence (PL) measurements. From fits to the TDH data, the dominant donor has a concentration N/sub D/ of about 1/spl times/10/sup 17/ cm/sup -3/ and an energy of about 60 meV, close to the expected hydrogenic value, whereas the total acceptor concentration N/sub A/ is much lower, about 2/spl times/10/sup 15/ cm/sup -3/. The 2-K PL data include a series of at least seven sharp lines over the energy range 3.356-3.366 eV, and from polarization, magnetic-field, and annealing (up to 1000/spl deg/C) experiments, these lines are interpreted as donor-bound excitons associated with donor complexes having different spacings between the atomic species. Electron-irradiation experiments show an electrical and optical threshold, attributed to Zn displacements, at an electron bombardment energy of about 1.3 MeV. The irradiation creates acceptors and destroys shallow donors, but these effects are produced at much lower rates than those found in most other common semiconductor materials, such as Si, GaAs, and GaN.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125562584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical characterisation of Mg-related energy levels and compensation mechanism in Mg-doped GaN 掺镁氮化镓中镁相关能级的电特性及补偿机制

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785119

D. Seghier, H. Gíslason

引用次数: 0

Structural, electronic and optical properties of AlN-based oxides on Si and GaN substrates Si和GaN衬底上aln基氧化物的结构、电子和光学性质

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785112

J. Olowolafe, I. Rău, J. Kolodzey, E. Chowdhury, K. Unruh, C. Swann

引用次数: 0

Electrical properties and thermal stability of Be-doped nonstoichiometric GaAs be掺杂非化学计量GaAs的电学性能和热稳定性

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785088

R. Lutz, P. Specht, R. Zhao, E. Weber

引用次数: 2

Twinning of As precipitates in low-temperature GaAs during high temperature annealing 高温退火过程中低温砷化镓中As析出物的孪生

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785091

S. Ruvimov, C. Dieker, J. Washburn, Z. Liliental-Weber

引用次数: 0

InAs/In/sub 0.52/Al/sub 0.48/As quantum wire structure with the specific layer-ordering orientation on InP[001] InP上具有层序取向的InAs/In/sub 0.52/Al/sub 0.48/As量子线结构[001]

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785107

J. Wu, B. Xu, H. Li, Q. W. Mo, Z. Wang, X. M. Zhao, D. Wu

引用次数: 1

Time-resolved laser spectroscopy of wide band gap semiconductors 宽频带隙半导体的时间分辨激光光谱学

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785121

F. H. Long, M. Pophristic, C. Tran, R. F. Kalicek, Z. Feng, Ian T. Ferguson

引用次数: 0