Twinning of As precipitates in low-temperature GaAs during high temperature annealing

S. Ruvimov, C. Dieker, J. Washburn, Z. Liliental-Weber
{"title":"Twinning of As precipitates in low-temperature GaAs during high temperature annealing","authors":"S. Ruvimov, C. Dieker, J. Washburn, Z. Liliental-Weber","doi":"10.1109/SIM.1998.785091","DOIUrl":null,"url":null,"abstract":"Twinning of nano-scale As precipitates formed in low-temperature GaAs during high temperature annealing was studied by high resolution electron microscopy. Symmetrical {1~104~} twins were nucleated during crystallization of amorphous or liquid-like As precipitates. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of the GaAs. Twin formation then often initiates on the long facet bounded by the {111}A plane. The crystallization front terminates with a void because of the shrinkage of the As volume during solidification.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Twinning of nano-scale As precipitates formed in low-temperature GaAs during high temperature annealing was studied by high resolution electron microscopy. Symmetrical {1~104~} twins were nucleated during crystallization of amorphous or liquid-like As precipitates. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of the GaAs. Twin formation then often initiates on the long facet bounded by the {111}A plane. The crystallization front terminates with a void because of the shrinkage of the As volume during solidification.
高温退火过程中低温砷化镓中As析出物的孪生
采用高分辨电子显微镜研究了低温砷化镓在高温退火过程中形成的纳米级As析出物的孪晶。对称的{1~104~}孪晶在非晶态或液态As析出过程中成核。在与GaAs的{111}B面平行的短面上,菱面体As的成核效果最好。双生体的形成通常开始于以{111}A面为界的长面。由于凝固过程中As体积的收缩,结晶前沿以空洞终止。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信