S. Ruvimov, C. Dieker, J. Washburn, Z. Liliental-Weber
{"title":"Twinning of As precipitates in low-temperature GaAs during high temperature annealing","authors":"S. Ruvimov, C. Dieker, J. Washburn, Z. Liliental-Weber","doi":"10.1109/SIM.1998.785091","DOIUrl":null,"url":null,"abstract":"Twinning of nano-scale As precipitates formed in low-temperature GaAs during high temperature annealing was studied by high resolution electron microscopy. Symmetrical {1~104~} twins were nucleated during crystallization of amorphous or liquid-like As precipitates. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of the GaAs. Twin formation then often initiates on the long facet bounded by the {111}A plane. The crystallization front terminates with a void because of the shrinkage of the As volume during solidification.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Twinning of nano-scale As precipitates formed in low-temperature GaAs during high temperature annealing was studied by high resolution electron microscopy. Symmetrical {1~104~} twins were nucleated during crystallization of amorphous or liquid-like As precipitates. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of the GaAs. Twin formation then often initiates on the long facet bounded by the {111}A plane. The crystallization front terminates with a void because of the shrinkage of the As volume during solidification.