be掺杂非化学计量GaAs的电学性能和热稳定性

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785088

R. Lutz, P. Specht, R. Zhao, E. Weber

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引用次数: 2

摘要

铍掺杂MBE低温生长富砷GaAs (LT-GaAs)，可以在250 ~ 300℃的生长温度下生长出载流子寿命极短的GaAs。霍尔效应和电阻率测量表明，在此生长温度范围内可以抑制生长样品的跳变传导。生长的LT-GaAs:Be的半绝缘性能可以通过仔细调节温度和Be掺杂来实现。此外，在此温度范围内生长的掺be的LT-GaAs显示出砷反位缺陷(As/sub Ga/)的热稳定性提高。

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Electrical properties and thermal stability of Be-doped nonstoichiometric GaAs

Beryllium doping of arsenic rich GaAs grown by MBE at low temperatures (LT-GaAs) allows one to grow GaAs with ultrashort carrier lifetimes at growth temperatures of 250/spl deg/ to 300/spl deg/C. Hall effect and resistivity measurements showed that in as-grown samples hopping conduction can be suppressed in this growth temperature range. Semi-insulating behavior of as-grown LT-GaAs:Be can be achieved by careful adjustment of temperature and Be-doping. In addition, Be-doped LT-GaAs grown in this temperature range shows increased thermal stability of the arsenic antisite defects (As/sub Ga/).

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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