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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)最新文献

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New techniques for the characterization of defect levels in semi-insulating materials 表征半绝缘材料缺陷水平的新技术
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785079
C. Longeaud, J. Kleider, P. Kamiński, Roman Kozłowski, M. Pawłowski, R. Cwirko
{"title":"New techniques for the characterization of defect levels in semi-insulating materials","authors":"C. Longeaud, J. Kleider, P. Kamiński, Roman Kozłowski, M. Pawłowski, R. Cwirko","doi":"10.1109/SIM.1998.785079","DOIUrl":"https://doi.org/10.1109/SIM.1998.785079","url":null,"abstract":"Deep levels in semi-insulating (SI) GaAs have been investigated by two complementary techniques: the high resolution photoinduced transient spectroscopy performed at the institute of electronic materials technology, and the modulated photocurrent experiment performed at the Laboratoire de Genie Electrique de Paris. In this paper we present and compare results obtained by both techniques for SI GaAs.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125289770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Vacancies in low-temperature-grown GaAs: observations by positron annihilation 低温生长GaAs中的空位:正电子湮灭的观测
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785089
J. Gebauer, F. Borner, R. Krause-Rehberg, P. Specht, E. Weber
{"title":"Vacancies in low-temperature-grown GaAs: observations by positron annihilation","authors":"J. Gebauer, F. Borner, R. Krause-Rehberg, P. Specht, E. Weber","doi":"10.1109/SIM.1998.785089","DOIUrl":"https://doi.org/10.1109/SIM.1998.785089","url":null,"abstract":"Positron annihilation will be used to study vacancy defects in GaAs grown at low temperatures (LT-GaAs), the vacancies in as-grown LT-GaAs can be identified to be Ga monovacancies, V/sub Ga/, the density of V/sub Ga/ is related to the nonstoichiometry in LT-GaAs, established by decreasing the growth temperature or increasing the As/Ga beam equivalent pressure (BEP) ratio, a maximum of about 2/spl times/10/sup 18/ V/sub Ga//cm/sup 3/ was observed at the lowest growth temperature (200/spl deg/C), annealing at elevated temperatures (/spl ap/600/spl deg/C) removes V/sub Ga/, instead, larger vacancy agglomerates are found, they are most likely associated with the As-precipitates commonly found in annealed LT-GaAs.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115977691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
MBE growth, structural studies and a new optical phenomenon in CdF/sub 2/-CaF/sub 2/:Eu superlattices on Si[111] Si上CdF/sub 2/-CaF/sub 2/:Eu超晶格的MBE生长、结构研究和新光学现象[111]
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785131
N. Sokolov, S.V. Gastev, A. Khilko, R. Kyutt, L. Sorokin, S. Suturin, D.B. Vcherashnii, P. Brown, C.J. Humphryes
{"title":"MBE growth, structural studies and a new optical phenomenon in CdF/sub 2/-CaF/sub 2/:Eu superlattices on Si[111]","authors":"N. Sokolov, S.V. Gastev, A. Khilko, R. Kyutt, L. Sorokin, S. Suturin, D.B. Vcherashnii, P. Brown, C.J. Humphryes","doi":"10.1109/SIM.1998.785131","DOIUrl":"https://doi.org/10.1109/SIM.1998.785131","url":null,"abstract":"New CdF/sub 2/-CaF/sub 2/:Eu superlattices (SLs) were grown from molecular beams and structurally characterized by high resolution X-ray diffractometry and high resolution transmission electron microscopy (HRTEM). A new optical phenomenon in luminescence of Eu/sup 2+/ ions in the SLs was revealed. It was found that the Eu/sup 2+/ luminescence intensity under continuous optical excitation drastically decreases in a few seconds after the beginning of the excitation. Possible application of the phenomenon in optical memory cells is discussed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116138146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Carbon in semi-insulating gallium arsenide: a comparative study between FTIR, SSMS and CPAA 半绝缘砷化镓中的碳:FTIR、SSMS和CPAA的比较研究
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785075
H. Alt, B. Wiedemann, J. Meyer, R.W. Michelmann, K. Bethge
{"title":"Carbon in semi-insulating gallium arsenide: a comparative study between FTIR, SSMS and CPAA","authors":"H. Alt, B. Wiedemann, J. Meyer, R.W. Michelmann, K. Bethge","doi":"10.1109/SIM.1998.785075","DOIUrl":"https://doi.org/10.1109/SIM.1998.785075","url":null,"abstract":"Local vibrational mode absorption was used to investigate the electrically active fraction of C in semi-insulating GaAs. A strictly linear relationship to the total chemical C concentration measured by spark source mass spectrometry is found. Using charged particle activation analysis as a reference method, a new calibration factor f/sub 77/=(7.2/spl plusmn/0.2)/spl times/10/sup 15/ cm/sup -1/ for the absorption integral at 77 K is derived. Based on the temperature dependence of the absorption a calibration factor f/sub 300/=(7.5/spl plusmn/0.5)/spl times/10/sup 15/ cm/sup -1/ is suggested for the room temperature measurement.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126613825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Particle detector grade semi-insulating GaAs: deep-level states studied by admittance transient spectroscopy 粒子探测器级半绝缘砷化镓:用导纳瞬态光谱研究深能级态
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785081
J. Darmo, F. Dubecký
{"title":"Particle detector grade semi-insulating GaAs: deep-level states studied by admittance transient spectroscopy","authors":"J. Darmo, F. Dubecký","doi":"10.1109/SIM.1998.785081","DOIUrl":"https://doi.org/10.1109/SIM.1998.785081","url":null,"abstract":"Deep-level states in semi-insulating GaAs are analyzed from the viewpoint of their possible impact on the detection performance of particle detectors prepared from such material. Presence of deep-level states observed was correlated with the detection spectra of 122 keV photons.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126314277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of Cu diffusion on electrical properties of GaAs Cu扩散对砷化镓电性能的影响
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785099
D. Seghier, H. Gíslason
{"title":"Effects of Cu diffusion on electrical properties of GaAs","authors":"D. Seghier, H. Gíslason","doi":"10.1109/SIM.1998.785099","DOIUrl":"https://doi.org/10.1109/SIM.1998.785099","url":null,"abstract":"We investigated semi-insulating GaAs samples produced by Cu diffusion into n-type starting material by means of thermally stimulated current (TSC) and photoconductivity (PC) measurements, We show that the Cu-diffusion changes the EL2 centre into a deep donor (T3) with a lower activation energy, 0.7 eV. Similar effects have been observed in MBE GaAs grown at low temperature. The PC quenching and recovery of the T3 trap are similar to those usually observed for EL2. We conclude that the deep donor is a complex centre involving As/sub Ga/. In addition, we observe the usual Cu acceptor levels Cu/sub A/ and Cu/sub B/ at E/sub v/+0.15 and E/sub v/+0.4 eV. The dynamics of optical quenching and thermal recovery of the TSC signal from the Cu levels suggest that they are neither related to EL2 nor two levels of the same Cu-related double acceptor.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129041527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electrical and detection performances of particle detectors based on bulk semi-insulating InP 基于大块半绝缘InP的粒子探测器的电学和探测性能
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785138
F. Dubecký, R. Fornari, M. Krempaský, J. Darmo, E. Gombia, M. Pikna, P. Pelfer, M. Sekáčová, M. Rucek
{"title":"Electrical and detection performances of particle detectors based on bulk semi-insulating InP","authors":"F. Dubecký, R. Fornari, M. Krempaský, J. Darmo, E. Gombia, M. Pikna, P. Pelfer, M. Sekáčová, M. Rucek","doi":"10.1109/SIM.1998.785138","DOIUrl":"https://doi.org/10.1109/SIM.1998.785138","url":null,"abstract":"A study of electrical transport properties and detection performances of the semi-insulating InP-based detectors of charged particles and ionizing radiation is presented. Detectors with a top P/sup +/ layer and a Schottky back contact give a charge collection efficiency over 90% and energy resolution about 3% (FWHM) for 5.48 MeV /spl alpha/-particles at 220 K. Detection of 60, 122 and 662 keV /spl gamma/-rays in a temperature range 215/spl divide/250 K is demonstrated.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114538724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-threshold quantum dot injection laser emitting at 1.9 /spl mu/m 发射速度为1.9 /spl μ m的低阈值量子点注入激光器
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785134
A. Zhukov, V. Ustinov, A. Egorov, A. R. Kovsh, S. Zaitsev, N. Gordeev, V. I. Kopchatov, N. Ledentsov, A. F. Tsatsul'nikov, B. V. Volovik, P. Kop’ev, Z. Alferov
{"title":"Low-threshold quantum dot injection laser emitting at 1.9 /spl mu/m","authors":"A. Zhukov, V. Ustinov, A. Egorov, A. R. Kovsh, S. Zaitsev, N. Gordeev, V. I. Kopchatov, N. Ledentsov, A. F. Tsatsul'nikov, B. V. Volovik, P. Kop’ev, Z. Alferov","doi":"10.1109/SIM.1998.785134","DOIUrl":"https://doi.org/10.1109/SIM.1998.785134","url":null,"abstract":"Self-organized InAs quantum dots inserted in an (In,Ga)As matrix lattice matched to an InP substrate were used as an active region of an injection laser. Laser action was observed up to 200 K. Low threshold (11.4 A/cm/sup 2/) lasing at 1.894 /spl mu/m (77 K) via the quantum dot states was realized. The ground-to-excited state transition with increasing threshold gain was observed. The quantum dot material gain of the order of 10/sup 4/ cm/sup -1/ was estimated.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124980103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Multi-layer conduction in epitaxial InSb grown on GaAs substrates GaAs衬底外延InSb的多层导电
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785103
M. Ahoujja, W. Mitchel, E. Michel, M. Razeghi
{"title":"Multi-layer conduction in epitaxial InSb grown on GaAs substrates","authors":"M. Ahoujja, W. Mitchel, E. Michel, M. Razeghi","doi":"10.1109/SIM.1998.785103","DOIUrl":"https://doi.org/10.1109/SIM.1998.785103","url":null,"abstract":"Electron transport properties of molecular beam epitaxy grown InSb on GaAs substrates are studied using the conventional Hall effect and the mobility spectrum technique. The latter technique reveals the existence of at least three different conducting channels in InSb. Our analysis of the Hall data and the mobility spectrum shows that the conduction in InSb is determined by a highly dislocated interfacial layer between the InSb layer and the GaAs substrate, a high mobility bulk-like InSb layer, and, possibly, a surface layer.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127123086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of metallic spikes and non-uniform density of two-dimensional electron gas (2DEG) on the contact resistance to AlGaAs/GaAs heterostructures 金属尖峰和非均匀密度二维电子气体(2DEG)对AlGaAs/GaAs异质结构接触电阻的影响
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI: 10.1109/SIM.1998.785139
Z. Tkaczyk, A. Wolkenberg
{"title":"Influence of metallic spikes and non-uniform density of two-dimensional electron gas (2DEG) on the contact resistance to AlGaAs/GaAs heterostructures","authors":"Z. Tkaczyk, A. Wolkenberg","doi":"10.1109/SIM.1998.785139","DOIUrl":"https://doi.org/10.1109/SIM.1998.785139","url":null,"abstract":"An expression for the series resistance of an HEMT has been derived, taking into account for the first time the nonuniformity of the ohmic contact interface. The penetration of the AuGeNi metallization into the 2DEG in the subcontract area (in the form deep penetrating \"spikes\") has been investigated and the model has been elaborated in order to determine the correct value of the contact resistance depending on the fraction of the area of penetration. Simulation of the growth of the spikes depending on the thermal processes has been made. The prediction of the shape \"spikes\" and their density makes it possible to calculate the value of the area of penetration. Therefore, a correlation between the dependence has been experimentally verified and it gave good agreement with the model. It has established the optimum parameters of thermal processing to obtain the minimum value of series resistance. The model of nonuniformity of interface may also be used to solve the problem of the influence of a periodic electrical potential on ballistic transport in mesoscopic devices.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125417253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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