Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)最新文献

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A study of crystal defects in radiation detector grade semi-insulating GaAs 辐射探测器级半绝缘砷化镓晶体缺陷的研究
D. Korytár, C. Ferrari, S. Strzelecka, A. Šatka, J. Darmo, F. Dubecký, A. Hruban
{"title":"A study of crystal defects in radiation detector grade semi-insulating GaAs","authors":"D. Korytár, C. Ferrari, S. Strzelecka, A. Šatka, J. Darmo, F. Dubecký, A. Hruban","doi":"10.1109/SIM.1998.785137","DOIUrl":"https://doi.org/10.1109/SIM.1998.785137","url":null,"abstract":"Crystal defects in semiconducting materials can play a crucial role in electrical parameters and performance of devices. In this work, detector grade bulk SI GaAs wafers of various producers have been examined by several characterisation techniques with the aim to compare their crystal perfection and to correlate the observed structural properties with the detecting properties of fabricated detectors. Three types of dislocation distribution by X-ray topography and etching have been identified in bulk SI GaAs materials: (i) dislocation-free, (ii) slip-like, and (iii) cellular structure. [004] rocking curves half-width have been measured to compare the overall crystal perfection of wafers, too. Microprecipitates were studied by infrared light scattering tomography. Collection efficiency and energy resolution of radiation detectors manufactured from the bulk SI GaAs wafers showed strong dependence on substrate quality. Homogeneity of the detector charge collection was investigated by the scanning EBIC.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125734505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Neutron and proton irradiation: effects on the active layer width and electric field distribution in semi-insulating GaAs Schottky diodes 中子和质子辐照对半绝缘GaAs肖特基二极管有源层宽度和电场分布的影响
A. Castaldini, A. Cavallini, L. Polenta, C. Canali, F. Nava
{"title":"Neutron and proton irradiation: effects on the active layer width and electric field distribution in semi-insulating GaAs Schottky diodes","authors":"A. Castaldini, A. Cavallini, L. Polenta, C. Canali, F. Nava","doi":"10.1109/SIM.1998.785097","DOIUrl":"https://doi.org/10.1109/SIM.1998.785097","url":null,"abstract":"Irradiation (with neutrons or protons) markedly changes the values of the active layer width as well as the electric field distribution of Schottky diodes made on semi-insulating GaAs. However, the behaviour of both of them as a function of the reverse biasing is almost the same as before irradiation, when either neutrons or protons are used. Spectroscopic measurements revealed that not only the dominant defect EL2 increases in density but also other shallower level traps, which must be accounted for to explain the observed changes of both active layer width and electric field.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126728138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heteroepitaxial passivation of GaAs surfaces and its influence on the photosensitivity spectra and recombination parameters of GaAs epitaxial layers and semi-insulating materials GaAs表面异质外延钝化及其对GaAs外延层和半绝缘材料光敏光谱和复合参数的影响
I. A. Karpovich, M. Stepikhova, W. Jantsch
{"title":"Heteroepitaxial passivation of GaAs surfaces and its influence on the photosensitivity spectra and recombination parameters of GaAs epitaxial layers and semi-insulating materials","authors":"I. A. Karpovich, M. Stepikhova, W. Jantsch","doi":"10.1109/SIM.1998.785077","DOIUrl":"https://doi.org/10.1109/SIM.1998.785077","url":null,"abstract":"We investigate the influence of heteroepitaxial passivation of GaAs surfaces by a thin lattice matched InGaP layer on the spectra of photomagnetic effect, planar photoconductivity and capacitor photovoltage in conducting layers and semi-insulating substrates of GaAs. Reduction of the surface recombination rate by one or two orders of magnitude at passivation of layer surfaces simplifies significantly determination of their recombination parameters by photoelectric methods and enables one to get an insight into the nature of the phenomena causing the decrease of photosensitivity in a strong absorption region. We revealed a strong influence of the state of the surface on recombination parameters of semi-insulating GaAs: the ambipolar diffusion length and the magnitude and ratio of electron to hole components of photoconductivity. Surface passivation changes this ratio towards domination of the electron component.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127406657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing 晶圆退火法改善掺铁InP均匀性及电性能
J. Jiménez, M. Avella, E. de la Puente
{"title":"Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing","authors":"J. Jiménez, M. Avella, E. de la Puente","doi":"10.1109/SIM.1998.785072","DOIUrl":"https://doi.org/10.1109/SIM.1998.785072","url":null,"abstract":"Thermal treatments are crucial steps for improving the quality of semi-insulating InP substrates. The result of these treatments depends on the starting material and the specific annealing conditions. The best results in terms of the electrical properties and homogeneity are obtained by annealing Fe-doped InP wafers. The influence of the specific annealing conditions is discussed. The best results are obtained for long annealing times (50 hours) and slow cooling rates, which give good homogeneity, high carrier mobility and high enough electrical compensation.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121642811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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