GaAs表面异质外延钝化及其对GaAs外延层和半绝缘材料光敏光谱和复合参数的影响

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785077

I. A. Karpovich, M. Stepikhova, W. Jantsch

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引用次数: 0

摘要

研究了薄晶格匹配InGaP层对GaAs表面的异质外延钝化对GaAs导电层和半绝缘衬底的光磁效应、平面光电导率和电容光电压谱的影响。在钝化层表面时，表面复合率降低一到两个数量级，大大简化了用光电方法确定其复合参数的方法，并使人们能够深入了解在强吸收区引起光敏性降低的现象的性质。我们发现了表面状态对半绝缘GaAs复合参数的强烈影响:双极性扩散长度和光电导率的电子与空穴分量的大小和比值。表面钝化改变了这一比例，使电子组分占主导地位。

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Heteroepitaxial passivation of GaAs surfaces and its influence on the photosensitivity spectra and recombination parameters of GaAs epitaxial layers and semi-insulating materials

We investigate the influence of heteroepitaxial passivation of GaAs surfaces by a thin lattice matched InGaP layer on the spectra of photomagnetic effect, planar photoconductivity and capacitor photovoltage in conducting layers and semi-insulating substrates of GaAs. Reduction of the surface recombination rate by one or two orders of magnitude at passivation of layer surfaces simplifies significantly determination of their recombination parameters by photoelectric methods and enables one to get an insight into the nature of the phenomena causing the decrease of photosensitivity in a strong absorption region. We revealed a strong influence of the state of the surface on recombination parameters of semi-insulating GaAs: the ambipolar diffusion length and the magnitude and ratio of electron to hole components of photoconductivity. Surface passivation changes this ratio towards domination of the electron component.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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