晶圆退火法改善掺铁InP均匀性及电性能

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785072

J. Jiménez, M. Avella, E. de la Puente

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引用次数: 0

摘要

热处理是提高半绝缘InP衬底质量的关键步骤。这些处理的结果取决于起始材料和特定的退火条件。对掺杂铁的InP晶圆进行退火处理，得到了最佳的电学性能和均匀性。讨论了具体退火条件的影响。在较长的退火时间(50小时)和较慢的冷却速度下，获得了较好的均匀性、高载流子迁移率和足够高的电补偿。

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Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing

Thermal treatments are crucial steps for improving the quality of semi-insulating InP substrates. The result of these treatments depends on the starting material and the specific annealing conditions. The best results in terms of the electrical properties and homogeneity are obtained by annealing Fe-doped InP wafers. The influence of the specific annealing conditions is discussed. The best results are obtained for long annealing times (50 hours) and slow cooling rates, which give good homogeneity, high carrier mobility and high enough electrical compensation.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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