Neutron and proton irradiation: effects on the active layer width and electric field distribution in semi-insulating GaAs Schottky diodes

Abstract

Irradiation (with neutrons or protons) markedly changes the values of the active layer width as well as the electric field distribution of Schottky diodes made on semi-insulating GaAs. However, the behaviour of both of them as a function of the reverse biasing is almost the same as before irradiation, when either neutrons or protons are used. Spectroscopic measurements revealed that not only the dominant defect EL2 increases in density but also other shallower level traps, which must be accounted for to explain the observed changes of both active layer width and electric field.