A study of crystal defects in radiation detector grade semi-insulating GaAs

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785137

D. Korytár, C. Ferrari, S. Strzelecka, A. Šatka, J. Darmo, F. Dubecký, A. Hruban

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引用次数: 2

Abstract

Crystal defects in semiconducting materials can play a crucial role in electrical parameters and performance of devices. In this work, detector grade bulk SI GaAs wafers of various producers have been examined by several characterisation techniques with the aim to compare their crystal perfection and to correlate the observed structural properties with the detecting properties of fabricated detectors. Three types of dislocation distribution by X-ray topography and etching have been identified in bulk SI GaAs materials: (i) dislocation-free, (ii) slip-like, and (iii) cellular structure. [004] rocking curves half-width have been measured to compare the overall crystal perfection of wafers, too. Microprecipitates were studied by infrared light scattering tomography. Collection efficiency and energy resolution of radiation detectors manufactured from the bulk SI GaAs wafers showed strong dependence on substrate quality. Homogeneity of the detector charge collection was investigated by the scanning EBIC.

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辐射探测器级半绝缘砷化镓晶体缺陷的研究

半导体材料中的晶体缺陷对器件的电气参数和性能起着至关重要的作用。在这项工作中，通过几种表征技术对不同生产商的探测器级大块SI GaAs晶圆进行了检测，目的是比较它们的晶体完美性，并将观察到的结构特性与制造的探测器的检测特性相关联。通过x射线形貌和蚀刻在块状SI GaAs材料中确定了三种类型的位错分布:(i)无位错，(ii)类滑移和(iii)细胞结构。[004]还测量了半宽摇摆曲线，以比较晶圆片的整体晶体完美性。采用红外散射层析技术对微析出物进行了研究。由大块硅砷化镓硅片制成的辐射探测器的收集效率和能量分辨率与衬底质量密切相关。利用扫描式EBIC研究了探测器电荷收集的均匀性。

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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