InP上具有层序取向的InAs/In/sub 0.52/Al/sub 0.48/As量子线结构[001]

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785107

J. Wu, B. Xu, H. Li, Q. W. Mo, Z. Wang, X. M. Zhao, D. Wu

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引用次数: 1

摘要

在分子束外延生长的InP[001]上形成了6周期InAs/ in /sub 0.52/Al/sub 0.48/As结构的量子线。用透射电镜对其结构进行了表征。研究发现，QWR阵列的横向周期性组成调制在[11~0]方向上，沿偏离[001]约30度的特定取向呈层序排列。这一偏离角度与利用有限元技术计算的量子线周围弹性畸变在结构中的分布是一致的。

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InAs/In/sub 0.52/Al/sub 0.48/As quantum wire structure with the specific layer-ordering orientation on InP[001]

Quantum wires were formed in the 6-period InAs/In/sub 0.52/Al/sub 0.48/As structure on InP [001] grown by molecular beam epitaxy. The structure was characterized with transmission electron microscopy. It was found that the lateral periodic compositional modulation in the QWR array was in the [11~0] direction and layer-ordered along the specific orientation deviating [001] by about 30 degrees. This deviating angle is consistent with the calculation of the distribution of elastic distortion around quantum wires in the structure using the finite element technique.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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