Electron-irradiation-induced disordering of CuPt-ordered GaInP studied by TEM-mode optical spectroscopy

Abstract

Electron-irradiation-induced disordering in CuPt-ordered GaInP has been examined by in-situ photoluminescence and cathodoluminescence spectroscopy in a transmission electron microscope. A decrease of luminescence intensity by the electron-irradiation in the energy range above 120 keV has been observed, and we have shown that the decrease is due to the Frenkel-type defects on the Ga and In sublattices generated by electron-irradiation. We have proposed that an electron-irradiation-induced migration of the Ga and In-vacancies dominates the disordering in the dose range below 2/spl times/10/sup 20/ cm/sup -2/ cm.