辐照硅的电学性质:半绝缘硅

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785074

B. Jones, M. McPherson, J. Santana

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引用次数: 4

摘要

明确的实验证据表明，辐照硅的电行为类似半绝缘的砷化镓，因此应被认为是半绝缘的。对弛豫半导体进行了分析。

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The electrical properties of irradiated silicon: semi-insulating silicon

Clear experimental evidence is presented that irradiated silicon behaves electrically like semi-insulating GaAs and hence should be considered semi-insulating. The analysis follows that for a relaxation semiconductor.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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