Preliminary results for GaInAs channel MISFETs fabricated on LEC-grown ternary GaInAs substrates

Abstract

We report the first demonstration of GaInAs channel functional heterostructure field-effect transistors grown on Cr-doped LEC Ga/sub 1-x/In/sub x/As ternary substrates. The devices feature Schottky gates with high reverse breakdown voltages and a forward ideality factor of n/spl sim/1.2-1.3, good channel modulation and a complete pinch-off. The drain I-V curves display some non-idealities associated with compositional non-uniformities in the substrates. Strained channel devices with a 15% Indium composition in the active layer are also demonstrated on ternary substrates. It is expected that continued progress in GaInAs ternary substrate development will permit the fabrication of high-performance transistors relying on an Indium rich channel.