砷化镓和碳化硅量子线阵列:制造和表征

V. Samuilov, I. A. Bashmakov, I.B. Butylina, I. Grigorieva, V. Ksenevich, L.V. Solovjova
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引用次数: 0

摘要

我们报道了一种在复杂液体(硝化纤维素溶液)中基于自组织模式制造介观有序阵列(网络)的新方法。为了制备半导体量子线阵列,这些网络被用作进一步反应束蚀刻GaAs表面的掩膜或用作在Si表面合成SiC的前驱体。转换网络的俄歇电子能谱碳峰表现出碳化硅典型的精细结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
GaAs and SiC quantum wire arrays: fabrication and characterisation
We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC.
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