Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium

R. Zhao, P. Specht, R. Lutz, N. Pu, S. Jeong, J. Bokor, E. Weber
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引用次数: 1

Abstract

The influence of Be-doping on carrier lifetime in low temperature grown (LT) GaAs has been studied using time-resolved reflectivity measurement. The ultrafast photogenerated carrier lifetime decreases with increasing Be doping concentration, because the total amount of excess As, i.e., arsenic antisites (As/sub Ga/), and the ionized arsenic antisites are increased due to mechanical and electrical compensation between As/sub Ga/, and Be acceptor. It was observed that the carrier lifetime in Be-doped LT-GaAs can be even shorter after high temperature annealing, which is contrary to the behavior of undoped samples.
掺杂铍的热稳定低温生长砷化镓的时间分辨反射率测量
采用时间分辨反射率测量方法研究了be掺杂对低温生长(LT) GaAs载流子寿命的影响。随着Be掺杂浓度的增加,过量As即砷对位(As/sub Ga/)的总量以及As/sub Ga/与Be受体之间的机械和电补偿使砷对位离子化增加,导致超快光生载流子寿命降低。结果表明,经高温退火后,掺杂be的LT-GaAs的载流子寿命更短,这与未掺杂样品的行为相反。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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