R. Zhao, P. Specht, R. Lutz, N. Pu, S. Jeong, J. Bokor, E. Weber
{"title":"Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium","authors":"R. Zhao, P. Specht, R. Lutz, N. Pu, S. Jeong, J. Bokor, E. Weber","doi":"10.1109/SIM.1998.785092","DOIUrl":null,"url":null,"abstract":"The influence of Be-doping on carrier lifetime in low temperature grown (LT) GaAs has been studied using time-resolved reflectivity measurement. The ultrafast photogenerated carrier lifetime decreases with increasing Be doping concentration, because the total amount of excess As, i.e., arsenic antisites (As/sub Ga/), and the ionized arsenic antisites are increased due to mechanical and electrical compensation between As/sub Ga/, and Be acceptor. It was observed that the carrier lifetime in Be-doped LT-GaAs can be even shorter after high temperature annealing, which is contrary to the behavior of undoped samples.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"6 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The influence of Be-doping on carrier lifetime in low temperature grown (LT) GaAs has been studied using time-resolved reflectivity measurement. The ultrafast photogenerated carrier lifetime decreases with increasing Be doping concentration, because the total amount of excess As, i.e., arsenic antisites (As/sub Ga/), and the ionized arsenic antisites are increased due to mechanical and electrical compensation between As/sub Ga/, and Be acceptor. It was observed that the carrier lifetime in Be-doped LT-GaAs can be even shorter after high temperature annealing, which is contrary to the behavior of undoped samples.