采用不同无损技术表征的半绝缘InP晶圆

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785073

M. Yamada, M. Fukuzawa, M. Akita, A. Herms, M. Uchida, O. Oda

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引用次数: 1

摘要

利用残余应变映射、光致发光和电阻率等无损技术，对磷气氛下未掺杂或微掺铁InP晶圆的多晶退火工艺进行了优化。优化后的退火工艺不但没有产生多余的残余应变，而且使残余应变减小和均匀化。综上所述，MWA已被证明是一种很有前途的方法，可以获得半绝缘的InP晶体，而不需要高铁掺杂。

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Semi-insulating InP crystal wafers characterized by different nondestructive techniques

Nondestructive techniques of mapping of residual strain, photoluminescence and resistivity were utilized to optimize the multiple wafer annealing (MWA) procedure of undoped or slightly Fe doped InP crystal wafers under phosphorous atmosphere. The annealing procedure optimized did not additionally produce unwanted residual strain but reduced and homogenized it. In conclusion, MWA has proved to be a promising method to obtain semi-insulating InP crystals without undesired high Fe doping.

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来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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