CdMnTe:Ga的亚稳态缺陷

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785132

J. Szatkowski, E. Płaczek-Popko, K. Sieraňski, B. Bieg

{"title":"CdMnTe:Ga的亚稳态缺陷","authors":"J. Szatkowski, E. Płaczek-Popko, K. Sieraňski, B. Bieg","doi":"10.1109/SIM.1998.785132","DOIUrl":null,"url":null,"abstract":"Deep levels were studied in bulk Ga doped Cd/sub 0.99/Mn/sub 0.01/Te and Cd/sub 0.95/Mn/sub 0.05/Te by DLTS method. Some of observed electron traps had strong temperature dependent capture cross-sections. Activation energies for these levels obtained from Arrhenius plots were equal 0.24 eV for both types of samples and 0.53 eV in Cd/sub 0.95/Mn/sub 0.05/Te. Energetic barriers for capture processes determined from the temperature dependence of capture cross sections for these traps were found to be equal 0.2 eV for the level in Cd/sub 0.99/Mn/sub 0.01/Te and 0.15 eV and 0.23 eV for the two levels in Cd/sub 0.95/Mn/sub 0.05/Te. These traps are possible candidates responsible for persistent photoconductivity observed in both materials.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Metastable defects in CdMnTe:Ga\",\"authors\":\"J. Szatkowski, E. Płaczek-Popko, K. Sieraňski, B. Bieg\",\"doi\":\"10.1109/SIM.1998.785132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deep levels were studied in bulk Ga doped Cd/sub 0.99/Mn/sub 0.01/Te and Cd/sub 0.95/Mn/sub 0.05/Te by DLTS method. Some of observed electron traps had strong temperature dependent capture cross-sections. Activation energies for these levels obtained from Arrhenius plots were equal 0.24 eV for both types of samples and 0.53 eV in Cd/sub 0.95/Mn/sub 0.05/Te. Energetic barriers for capture processes determined from the temperature dependence of capture cross sections for these traps were found to be equal 0.2 eV for the level in Cd/sub 0.99/Mn/sub 0.01/Te and 0.15 eV and 0.23 eV for the two levels in Cd/sub 0.95/Mn/sub 0.05/Te. These traps are possible candidates responsible for persistent photoconductivity observed in both materials.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

用DLTS方法研究了块体Ga掺杂Cd/sub 0.99/Mn/sub 0.01/Te和Cd/sub 0.95/Mn/sub 0.05/Te的深能级。一些观察到的电子陷阱具有很强的温度依赖性捕获截面。在阿伦尼乌斯图中，两种样品的活化能均为0.24 eV, Cd/sub 0.95/Mn/sub 0.05/Te的活化能均为0.53 eV。在Cd/sub 0.99/Mn/sub 0.01/Te两个能级上，捕获过程的能垒分别为0.2 eV和0.15 eV，在Cd/sub 0.95/Mn/sub 0.05/Te两个能级上捕获过程的能垒分别为0.23 eV。这些陷阱可能是在两种材料中观察到的持续光电导率的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Metastable defects in CdMnTe:Ga

Deep levels were studied in bulk Ga doped Cd/sub 0.99/Mn/sub 0.01/Te and Cd/sub 0.95/Mn/sub 0.05/Te by DLTS method. Some of observed electron traps had strong temperature dependent capture cross-sections. Activation energies for these levels obtained from Arrhenius plots were equal 0.24 eV for both types of samples and 0.53 eV in Cd/sub 0.95/Mn/sub 0.05/Te. Energetic barriers for capture processes determined from the temperature dependence of capture cross sections for these traps were found to be equal 0.2 eV for the level in Cd/sub 0.99/Mn/sub 0.01/Te and 0.15 eV and 0.23 eV for the two levels in Cd/sub 0.95/Mn/sub 0.05/Te. These traps are possible candidates responsible for persistent photoconductivity observed in both materials.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

自引率

0.00%

发文量