Metastable defects in CdMnTe:Ga

Abstract

Deep levels were studied in bulk Ga doped Cd/sub 0.99/Mn/sub 0.01/Te and Cd/sub 0.95/Mn/sub 0.05/Te by DLTS method. Some of observed electron traps had strong temperature dependent capture cross-sections. Activation energies for these levels obtained from Arrhenius plots were equal 0.24 eV for both types of samples and 0.53 eV in Cd/sub 0.95/Mn/sub 0.05/Te. Energetic barriers for capture processes determined from the temperature dependence of capture cross sections for these traps were found to be equal 0.2 eV for the level in Cd/sub 0.99/Mn/sub 0.01/Te and 0.15 eV and 0.23 eV for the two levels in Cd/sub 0.95/Mn/sub 0.05/Te. These traps are possible candidates responsible for persistent photoconductivity observed in both materials.