Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785095

M. Rogalla, K. Runge

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Abstract

A model is developed for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors. The model is based on a field-enhanced electron capture of the EL2 defect. The influence of the compensation mechanism in SI GaAs on the field distribution and leakage current density of the detectors is discussed. The detailed understanding allows a device optimisation.

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基于半绝缘砷化镓的肖特基二极管中准中性区的形成

建立了半绝缘(SI) GaAs粒子探测器肖特基接触下的电场分布模型。该模型基于EL2缺陷的场增强电子捕获。讨论了硅砷化镓补偿机制对探测器场分布和漏电流密度的影响。详细的了解允许设备优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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