Implant isolation study of In/sub 0.53/Ga/sub 0.47/As

M. Almonte, K. Yu, E. Haller, M. Ridgway, H. Hou, J. Mirecki-Millunchick
{"title":"Implant isolation study of In/sub 0.53/Ga/sub 0.47/As","authors":"M. Almonte, K. Yu, E. Haller, M. Ridgway, H. Hou, J. Mirecki-Millunchick","doi":"10.1109/SIM.1998.785070","DOIUrl":null,"url":null,"abstract":"Effects of implantation in In/sub 0.53/Ga/sub 0.47/As due to damage by implantation of Ne/sup +/ ions and to compensation by implantation of Fe/sup +/ ions are reported. The former only involves damage induced effects while the latter leads to damage and dopant induced compensation. In addition, the changes in the electrical properties of the layers are correlated to the lattice damage (damage induced effects) and/or the diffusion of the compensating dopants (dopant induced compensation). Structural characterization of the layers is performed with channeling Rutherford Backscattering Spectrometry (RBS). The distribution of the compensating dopants in the as-implanted and annealed layers is examined by Secondary Ion Mass Spectrometry (SIMS). The thermal stability of these damage and compensation induced effects producing implant isolation is discussed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Effects of implantation in In/sub 0.53/Ga/sub 0.47/As due to damage by implantation of Ne/sup +/ ions and to compensation by implantation of Fe/sup +/ ions are reported. The former only involves damage induced effects while the latter leads to damage and dopant induced compensation. In addition, the changes in the electrical properties of the layers are correlated to the lattice damage (damage induced effects) and/or the diffusion of the compensating dopants (dopant induced compensation). Structural characterization of the layers is performed with channeling Rutherford Backscattering Spectrometry (RBS). The distribution of the compensating dopants in the as-implanted and annealed layers is examined by Secondary Ion Mass Spectrometry (SIMS). The thermal stability of these damage and compensation induced effects producing implant isolation is discussed.
In/sub 0.53/Ga/sub 0.47/As的植体分离研究
报道了在in /sub 0.53/Ga/sub 0.47/As中注入Ne/sup +/离子造成的损伤和Fe/sup +/离子的补偿效应。前者只涉及损伤诱导效应,后者涉及损伤和掺杂诱导补偿。此外,层电性能的变化与晶格损伤(损伤诱导效应)和/或补偿掺杂剂的扩散(掺杂剂诱导补偿)有关。利用通道卢瑟福后向散射光谱法(RBS)进行了层的结构表征。利用二次离子质谱法(SIMS)研究了补偿掺杂剂在注入层和退火层中的分布。讨论了引起种植体分离的这些损伤和补偿效应的热稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信