铒注入LT-GaAs的结构和光致发光分析

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785090

R. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P. Klein, P. Specht, E. Weber

{"title":"铒注入LT-GaAs的结构和光致发光分析","authors":"R. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P. Klein, P. Specht, E. Weber","doi":"10.1109/SIM.1998.785090","DOIUrl":null,"url":null,"abstract":"Characteristic 1.54 /spl mu/m Er/sup 3+/ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs (Be doped and undoped samples). Cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for elevated temperature implants up to an Er total fluence of 1.36/spl times/10/sup 14/ Er/cm/sup 2/. No Er emission was observed from any of the as-implanted samples. Post-implantation annealing optimized the Er PL emission intensity near 650/spl deg/C for Be doped samples, while for undoped samples it was near 750/spl deg/C anneal. The beginning of Er precipitation was observed after 750/spl deg/C annealing for the above Er fluence but, on increasing the Er concentration by higher implantation fluences, it was observed after annealing at 650/spl deg/C. These precipitates are likely ErAs.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and photoluminescence analysis of Er implanted LT-GaAs\",\"authors\":\"R. Maltez, Z. Liliental-Weber, J. Washburn, M. Behar, P. Klein, P. Specht, E. Weber\",\"doi\":\"10.1109/SIM.1998.785090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Characteristic 1.54 /spl mu/m Er/sup 3+/ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs (Be doped and undoped samples). Cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for elevated temperature implants up to an Er total fluence of 1.36/spl times/10/sup 14/ Er/cm/sup 2/. No Er emission was observed from any of the as-implanted samples. Post-implantation annealing optimized the Er PL emission intensity near 650/spl deg/C for Be doped samples, while for undoped samples it was near 750/spl deg/C anneal. The beginning of Er precipitation was observed after 750/spl deg/C annealing for the above Er fluence but, on increasing the Er concentration by higher implantation fluences, it was observed after annealing at 650/spl deg/C. These precipitates are likely ErAs.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

经Er注入、退火、低温生长的GaAs (Be掺杂和未掺杂样品)的发射特性为1.54 /spl mu/m Er/sup 3+/。横断面透射电子显微镜(TEM)研究表明，当Er总影响为1.36/spl倍/10/sup 14/ Er/cm/sup 2/时，高温植入物的结构损伤很小。未观察到任何注入样品的Er发射。掺杂后退火使掺杂样品的Er PL发射强度在650/spl℃附近，未掺杂样品的Er PL发射强度在750/spl℃附近。在750/spl℃以上Er浓度下退火后，观察到Er开始析出，但在650/spl℃下退火后，在更高的Er浓度下，观察到Er开始析出。这些沉淀物很可能是era。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Structural and photoluminescence analysis of Er implanted LT-GaAs

Characteristic 1.54 /spl mu/m Er/sup 3+/ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs (Be doped and undoped samples). Cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for elevated temperature implants up to an Er total fluence of 1.36/spl times/10/sup 14/ Er/cm/sup 2/. No Er emission was observed from any of the as-implanted samples. Post-implantation annealing optimized the Er PL emission intensity near 650/spl deg/C for Be doped samples, while for undoped samples it was near 750/spl deg/C anneal. The beginning of Er precipitation was observed after 750/spl deg/C annealing for the above Er fluence but, on increasing the Er concentration by higher implantation fluences, it was observed after annealing at 650/spl deg/C. These precipitates are likely ErAs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

自引率

0.00%

发文量