III-V型自形成量子点的发光调谐:结构、材料体系和点/势垒界面的影响

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785106

R. Leon

{"title":"III-V型自形成量子点的发光调谐:结构、材料体系和点/势垒界面的影响","authors":"R. Leon","doi":"10.1109/SIM.1998.785106","DOIUrl":null,"url":null,"abstract":"Tuning the emission in semiconductor quantum dots [QDs] has be attained using different strategies: by changing the material composition in the dot/barriers; interdiffusion or intermixing; using a graded growth rate; and changing the quantum box average dimensions and concentrations for fixed ternary compositions. The effects of these structural and compositional variations on the luminescence properties of these structures is presented and discussed.","PeriodicalId":253421,"journal":{"name":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","volume":"514 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Tuning the luminescence emission in III-V self-forming quantum dots: influence of structure, material system and dot/barrier interface\",\"authors\":\"R. Leon\",\"doi\":\"10.1109/SIM.1998.785106\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tuning the emission in semiconductor quantum dots [QDs] has be attained using different strategies: by changing the material composition in the dot/barriers; interdiffusion or intermixing; using a graded growth rate; and changing the quantum box average dimensions and concentrations for fixed ternary compositions. The effects of these structural and compositional variations on the luminescence properties of these structures is presented and discussed.\",\"PeriodicalId\":253421,\"journal\":{\"name\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"volume\":\"514 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1998.785106\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1998.785106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

利用不同的策略可以实现半导体量子点的发射调谐:通过改变点/势垒中的材料成分;相互扩散或混合;使用分级生长速率;改变固定三元组合物的量子盒平均尺寸和浓度。提出并讨论了这些结构和组成的变化对这些结构的发光性能的影响。

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Tuning the luminescence emission in III-V self-forming quantum dots: influence of structure, material system and dot/barrier interface

Tuning the emission in semiconductor quantum dots [QDs] has be attained using different strategies: by changing the material composition in the dot/barriers; interdiffusion or intermixing; using a graded growth rate; and changing the quantum box average dimensions and concentrations for fixed ternary compositions. The effects of these structural and compositional variations on the luminescence properties of these structures is presented and discussed.

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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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