Tuning the luminescence emission in III-V self-forming quantum dots: influence of structure, material system and dot/barrier interface

Abstract

Tuning the emission in semiconductor quantum dots [QDs] has be attained using different strategies: by changing the material composition in the dot/barriers; interdiffusion or intermixing; using a graded growth rate; and changing the quantum box average dimensions and concentrations for fixed ternary compositions. The effects of these structural and compositional variations on the luminescence properties of these structures is presented and discussed.