用于固体激光器被动锁模的离子注入反谐振法布里珀罗饱和吸收体

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Pub Date : 1998-06-01 DOI:10.1109/SIM.1998.785086

M. Lederer, B. Luther-Davies, H. Tan, C. Jagadish

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引用次数: 0

摘要

我们利用金属有机气相外延(MOVPE)生长，然后进行离子注入和可选的热退火，制备了用于被动锁模近红外固体激光器的基于砷化镓的抗谐振法布里-珀罗饱和吸收器(a - fpsa)。我们提出微分反射率测量显示离子注入和退火的影响。该器件的特点是具有大的信号响应，包括饱和影响、调制深度和不可漂白损耗，这些都是被动锁模的重要参数。最后，我们在Ti:蓝宝石激光器中使用我们的样品来演示模式锁定，观察稳定可靠的自启动，100 fs范围内的脉冲和50 nm的可调性。计算机模拟结果与实验结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers

We have fabricated GaAs based anti-resonant Fabry-Perot saturable absorbers (A-FPSAs) for passively mode-locking near infrared solid state lasers, using Metal Organic Vapour Phase Epitaxy (MOVPE) growth followed by ion-implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterised for their large signal response including saturation fluence, modulation depth and non-bleachable losses-important parameters for passive mode-locking. Finally we demonstrate mode-locking using our samples within a Ti:sapphire laser observing stable and reliable self-starting, pulses in the 100 fs range, and 50 nm tunability. Results of computer simulations are in good agreement with the experiments.

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来源期刊

Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

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